DE SANTI, CARLO

DE SANTI, CARLO  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Risultati 1 - 20 di 365 (tempo di esecuzione: 0.028 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
2DEG Retraction and Potential Distribution of GaN-on-Si HEMTs Investigated Through a Floating Gate Terminal 2018 Rossetto, I.Meneghini, M.De Santi, C.PANDEY, SUDIPMeneghesso, G.Zanoni, E. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications 2016 DE SANTI, CARLODALCANALE, STEFANOSTOCCO, ANTONIORAMPAZZO, FABIANAGERARDIN, SIMONEMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - proc. of the 8th Wide Bandgap Semiconductors and Components Workshop
A Generalized Approach to Determine the Switching Reliability of GaN HEMTs on-Wafer Level 2021 Modolo N.Minetto A.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS IEEE International Reliability Physics Symposium Proceedings
A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects 2020 Modolo N.Meneghini M.Barbato A.Nardo A.De Santi C.Meneghesso G.Zanoni E. + MICROELECTRONICS RELIABILITY - -
A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs 2020 Modolo, NicolaDe Santi, CarloMeneghini, Matteo + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires 2016 DE SANTI, CARLOMENEGHINI, MATTEOZANONI, ENRICO + JOURNAL OF APPLIED PHYSICS - -
A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs 2021 Modolo N.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + IEEE ELECTRON DEVICE LETTERS - -
A Review of SiC Commercial Devices for Automotive: Properties and Challenges 2023 Alberto MarcuzziDavide FaveroCarlo De SantiGaudenzio MeneghessoEnrico ZanoniMatteo Meneghini - - Proceedings of the 7th AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE 2023)
A review of the reliability of integrated ir laser diodes for silicon photonics 2021 Buffolo M.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + ELECTRONICS - -
Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects 2015 LA GRASSA, MARCOMENEGHINI, MATTEODE SANTI, CARLOMENEGHESSO, GAUDENZIOZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
Aging behavior, reliability, and failure physics of GaN-based optoelectronic components 2016 ZANONI, ENRICOMENEGHINI, MATTEOMENEGHESSO, GAUDENZIODE SANTI, CARLOLA GRASSA, MARCOBUFFOLO, MATTEOTRIVELLIN, NICOLAMONTI, DESIREE - - Proc. SPIE 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX
Analysis and Modeling of VthShift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature 2022 Masin F.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS Proceedgins of 2022 IEEE International Reliability Physics Symposium (IRPS)
Analysis of Current Transport Layer Localized Resistivity Increase After High Stress on InGaN LEDs 2023 Trivellin, NicolaBuffolo, MatteoDe Santi, CarloZanoni, EnricoMeneghesso, GaudenzioMeneghini, Matteo IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN INDUSTRIAL ELECTRONICS - -
Analysis of defect-related optical degradation of VCSILs for photonic integrated circuits 2023 Zenari M.Buffolo M.Fornasier M.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + - - Proceedings of SPIE Photonics West 2023 conference
Analysis of degradation mechanisms in UVC single QW LEDs through electrical, optical and spectral measurements 2022 F. PivaN. RoccatoM. BuffoloC. De SantiM. PilatiG. MeneghessoE. ZanoniM. Meneghini + - - Proceedings of the 2022 International Workshop on Nitride Semiconductors
Analysis of degradation processes of UV‐A light emitting diodes stressed at constant current 2016 MONTI, DESIREEMENEGHINI, MATTEODE SANTI, CARLOMENEGHESSO, GAUDENZIOZANONI, ENRICO - - Proc. of 40th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe
Analysis of dislocation-related and point-defects in III-As layers by extensive DLTS study 2022 Zenari, MBuffolo, MDe Santi, CMeneghesso, GZanoni, EMeneghini, M + - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings Volume 11990, Nanoscale and Quantum Materials: From Synthesis and Laser Processing to Applications 2022
Analysis of the deep level responsible for the degradation of InGaN-based laser diodes by DLTS 2012 MENEGHINI, MATTEODE SANTI, CARLOTRIVELLIN, NICOLAMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - Proceedings of SPIE
Analysis of the mechanisms limiting the reliability of retrofit LED lamps 2015 DE SANTI, CARLODAL LAGO, MATTEOBUFFOLO, MATTEOMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO - - 2015 IEEE 1st International Forum on Research and Technologies for Society and Industry, RTSI 2015 - Proceedings
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs 2020 Mukherjee K.Borga M.Ruzzarin M.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + APPLIED PHYSICS EXPRESS - -