We present new results on electrostatic discharge on SOI MOSFETs irradiated with heavy-ion. Irradiation produces a reduction of ESD breakdown voltage and an enhanced probability of generating source-drain low-resistance filaments, even after ESD stress to the gate terminal, which is never observed in unirradiated devices.

Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs With Ultra-Thin Gate Oxide

GERARDIN, SIMONE;GRIFFONI, ALESSIO;TAZZOLI, AUGUSTO;CESTER, ANDREA;MENEGHESSO, GAUDENZIO;PACCAGNELLA, ALESSANDRO
2007

Abstract

We present new results on electrostatic discharge on SOI MOSFETs irradiated with heavy-ion. Irradiation produces a reduction of ESD breakdown voltage and an enhanced probability of generating source-drain low-resistance filaments, even after ESD stress to the gate terminal, which is never observed in unirradiated devices.
44th IEEE - Nuclear and Space radiation Effects Conference - NSREC 2007
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/2512453
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