We propose a numerical model for double layer and double carrier injection OLED. We studied the stress-induced trap generation by using the numerical model, providing information about the trap density and trap location. To validate our model, we compared our simulation results to data reported in the literature, showing good agreement in electrical characteristics.
Study of the effect of stress-induced trap level on OLED characteristics by numerical model
CESTER, ANDREA;BARI, DANIELE;WRACHIEN, NICOLA;MENEGHESSO, GAUDENZIO
2012
Abstract
We propose a numerical model for double layer and double carrier injection OLED. We studied the stress-induced trap generation by using the numerical model, providing information about the trap density and trap location. To validate our model, we compared our simulation results to data reported in the literature, showing good agreement in electrical characteristics.File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
