The passivation of the rear side of silicon solar cells has become a challenging aspect in the optimization of their efficiency. One of the most promising dielectric layers used for this purpose is the Aluminum Oxide (Al2O3), but its passivation properties vary with thickness and with the deposition technique. In this work, we compare different deposition techniques. For each method the thickness of the Al2O3 layer is varied to optimize the result. Carrier lifetime is considered as the index of the passivation quality. Its extrapolation and the optical characterization of the samples are also described.

Thermal And Electrical Characterization Of Catastrophic Degradation Of Silicon Solar Cells Submitted To Reverse Current Stress

COMPAGNIN, ALESSANDRO;MENEGHINI, MATTEO;GILIBERTO, VALENTINA;BARBATO, MARCO;MARSILI, MARGHERITA;ZANONI, ENRICO;MENEGHESSO, GAUDENZIO
2013

Abstract

The passivation of the rear side of silicon solar cells has become a challenging aspect in the optimization of their efficiency. One of the most promising dielectric layers used for this purpose is the Aluminum Oxide (Al2O3), but its passivation properties vary with thickness and with the deposition technique. In this work, we compare different deposition techniques. For each method the thickness of the Al2O3 layer is varied to optimize the result. Carrier lifetime is considered as the index of the passivation quality. Its extrapolation and the optical characterization of the samples are also described.
IEEE 39th Photovoltaic Specialists Conference (PVSC 2013)
9781479932993
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2695089
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