We report on AlN/GaN double heterostructures for high frequency applications. 600 hours preliminary reliability assessment has been performed on these emerging RF devices, showing promising millimeter-wave 100 nm gate length GaN-on-Si device stability for the first time. A 150 nm AlN/GaN double heterostructure has been developed and evaluated on SiC substrate. State-of-the-art CW power-added-efficiencies (PAE) at 10 and 18 GHz have been achieved on ultrathin barrier (6 nm) GaN devices while operating at a drain bias exceeding 30 V
High performance high reliability AlN/GaN DHFET
SILVESTRI, RICCARDO;MENEGHINI, MATTEO;ZANONI, ENRICO;MENEGHESSO, GAUDENZIO
2014
Abstract
We report on AlN/GaN double heterostructures for high frequency applications. 600 hours preliminary reliability assessment has been performed on these emerging RF devices, showing promising millimeter-wave 100 nm gate length GaN-on-Si device stability for the first time. A 150 nm AlN/GaN double heterostructure has been developed and evaluated on SiC substrate. State-of-the-art CW power-added-efficiencies (PAE) at 10 and 18 GHz have been achieved on ultrathin barrier (6 nm) GaN devices while operating at a drain bias exceeding 30 VFile in questo prodotto:
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