SILVESTRI, RICCARDO

SILVESTRI, RICCARDO  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Risultati 1 - 19 di 19 (tempo di esecuzione: 0.035 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 2011 RAMPAZZO, FABIANASTOCCO, ANTONIOSILVESTRI, RICCARDOMENEGHINI, MATTEORONCHI, NICOLO'BISI, DAVIDEMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - 20th European Heterostructure Technology meeting (HeTech 2011)
Electric-field and Thermally-activated Failure Mechanisms of AlGaN/GaN High Electron Mobility Transistors 2011 ZANONI, ENRICOMENEGHESSO, GAUDENZIOMENEGHINI, MATTEOSTOCCO, ANTONIORAMPAZZO, FABIANASILVESTRI, RICCARDOROSSETTO, ISABELLARONCHI, NICOLO' - - Gallium Nitride and Silicon Carbide Power Technologies - 220th ECS Meeting; Boston, MA; United States; 9 October 2011 through 14 October 2011; Code 88574
Time dependent Degradation of AlGaN/GaN HEMTs 2012 MENEGHESSO, GAUDENZIOZANONI, ENRICOMENEGHINI, MATTEOSTOCCO, ANTONIOSILVESTRI, RICCARDOBERTIN, MARCORAMPAZZO, FABIANA - - -
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 2012 MENEGHINI, MATTEOSTOCCO, ANTONIOSILVESTRI, RICCARDORONCHI, NICOLO'MENEGHESSO, GAUDENZIOZANONI, ENRICO - - IEEE IRPS2012, International Reliability Physics Symposium
Degradation of AlGaN/GaN high electron mobility transistors related to hot electrons 2012 MENEGHINI, MATTEOSTOCCO, ANTONIOSILVESTRI, RICCARDOMENEGHESSO, GAUDENZIOZANONI, ENRICO APPLIED PHYSICS LETTERS - -
Highly stable low noise / high power AlN/GaN-on-silicon double heterostructure HEMTs operating at 40 GHz 2013 SILVESTRI, RICCARDOMENEGHINI, MATTEOZANONI, ENRICOMENEGHESSO, GAUDENZIO + - - 2013 IEEE International Reliability Physics Symposium, IRPS 2013
Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate 2013 ROSSETTO, ISABELLARAMPAZZO, FABIANASILVESTRI, RICCARDOZANANDREA, ALBERTOMENEGHINI, MATTEOZANONI, ENRICOMENEGHESSO, GAUDENZIO + MICROELECTRONICS RELIABILITY - -
GaN-Based Power HEMTs: Parasitic, Reliability and High Field Issues 2013 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOBISI, DAVIDESILVESTRI, RICCARDOZANANDREA, ALBERTOZANONI, ENRICO + ECS TRANSACTIONS - -
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 2013 RAMPAZZO, FABIANASILVESTRI, RICCARDOSPIAZZI, GIORGIOZANONI, ENRICOGERARDIN, SIMONEMENEGHESSO, GAUDENZIOPACCAGNELLA, ALESSANDRO + - - RD13 11th International Conference on Large Scale Applications and Radiation Hardness of Semiconductor Detectors
First Reliability Demonstration of Sub-200-nm AlN/GaN-on-Silicon Double-Heterostructure HEMTs for Ka-Band Applications 2013 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOSILVESTRI, RICCARDOZANONI, ENRICO + IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY - -
Evaluation of AlN/GaN/AlGaN double heterostructure on SiC substrate for high power millimeter wave applications 2014 SILVESTRI, RICCARDOMENEGHINI, MATTEOZANONI, ENRICOMENEGHESSO, GAUDENZIO + - - Proc. of ESA 7th wide-bandgap semiconductors & components workshop 2014
Threshold Voltage Instabilities in D-Mode GaN HEMTs for Power Switching Applications 2014 MENEGHESSO, GAUDENZIOSILVESTRI, RICCARDOMENEGHINI, MATTEOCESTER, ANDREAZANONI, ENRICO + - - 52nd IEEE International Reliability Physics Symposium, IRPS
High performance high reliability AlN/GaN DHFET 2014 SILVESTRI, RICCARDOMENEGHINI, MATTEOZANONI, ENRICOMENEGHESSO, GAUDENZIO + PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE - 2014 44th European Solid State Device Research Conference (ESSDERC)
Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors 2015 MENEGHINI, MATTEOSILVESTRI, RICCARDODALCANALE, STEFANOBISI, DAVIDEZANONI, ENRICOMENEGHESSO, GAUDENZIO + - - IEEE International Reliability Physics Symposium Proceedings
High PAE high reliability AlN/GaN double heterostructure 2015 SILVESTRI, RICCARDOMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + SOLID-STATE ELECTRONICS - -
Temperature-dependent dynamic RON in GaN-based MIS-HEMTs: Role of surface traps and buffer leakage 2015 MENEGHINI, MATTEOSILVESTRI, RICCARDODALCANALE, STEFANOBISI, DAVIDEZANONI, ENRICOMENEGHESSO, GAUDENZIO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Experimental demonstration of weibull distributed failure in p-type GaN high electron mobility transistors under high forward bias stress 2016 ROSSETTO, ISABELLAMENEGHINI, MATTEOSILVESTRI, RICCARDODALCANALE, STEFANOZANONI, ENRICOMENEGHESSO, GAUDENZIO + - - Proceedings of the 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
High voltage trapping effects in GaN-based metal-insulator-semiconductor transistors 2016 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOSILVESTRI, RICCARDOZANONI, ENRICO + JAPANESE JOURNAL OF APPLIED PHYSICS - -
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure 2016 MENEGHINI, MATTEOSILVESTRI, RICCARDOROSSETTO, ISABELLAZANONI, ENRICOMENEGHESSO, GAUDENZIODALCANALE, STEFANO + MICROELECTRONICS RELIABILITY - -