MODOLO, NICOLA

MODOLO, NICOLA  

Università di Padova  

Mostra records
Risultati 1 - 20 di 28 (tempo di esecuzione: 0.03 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
A Generalized Approach to Determine the Switching Reliability of GaN HEMTs on-Wafer Level 2021 Modolo N.Minetto A.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS IEEE International Reliability Physics Symposium Proceedings
A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects 2020 Modolo N.Meneghini M.Barbato A.Nardo A.De Santi C.Meneghesso G.Zanoni E. + MICROELECTRONICS RELIABILITY - -
A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs 2020 Modolo, NicolaDe Santi, CarloMeneghini, Matteo + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs 2021 Modolo N.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + IEEE ELECTRON DEVICE LETTERS - -
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs 2022 Modolo N.Fregolent M.Masin F.Benato A.Bettini A.Buffolo M.De Santi C.Borga M.Vogrig D.Neviani A.Meneghesso G.Zanoni E.Meneghini M. + MICROELECTRONICS RELIABILITY - -
Charge trapping in GaN Power Transistors: Challenges and Perspectives 2021 Meneghini, MModolo, NNardo, ADe Santi, CMeneghesso, GZanoni, E + - - 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices 2022 Modolo N.De Santi C.Bevilacqua A.Neviani A.Meneghesso G.Zanoni E.Meneghini M. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Cumulative Hot-Electron Trapping in GaN-Based Power HEMTs Observed by an Ultra-Fast (10V/ns) on-Wafer Methodology 2021 Modolo N.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS - -
Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier 2022 Gao Z.Chiocchetta F.De Santi C.Modolo N.Rampazzo F.Meneghini M.Meneghesso G.Zanoni E. + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS Proceedings of 2022 IEEE International Reliability Physics Symposium (IRPS)
Deep levels effects and on-wafer reliability of 0.15 um InAlN/GaN and InAlGaN/GaN HEMTs with AlGaN backbarrier for RF applications 2022 Z. GaoF. ChiocchettaM. FornasierM. SaroE. StramareA. TonelloC. SharmaN. ModoloC. De SantiF. RampazzoG. MeneghessoM. MeneghiniE. Zanoni + - - Proceedings of the 2022 International Workshop on Nitride Semiconductors
Defect States Extraction from Stretched Exponential (de)trapping Response 2022 Carlo De SantiNicola ModoloGaudenzio MeneghessoEnrico ZanoniMatteo Meneghini + - - Proceedings of Compound Semiconductor Week 2022
Distributed Trap Levels and Hot-Electron Trapping in Power GaN HEMTs Characterization and Modeling 2023 MODOLO, NICOLA - - -
Drain Field Plate Impact on the Hard-Switching Performance of AlGaN/GaN HEMTs 2021 Minetto A.Modolo N.Meneghini M.Zanoni E. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Dynamic performance of wide bandgap devices 2022 C. De SantiM. FregolentN. ModoloA. NardoM. BuffoloF. RampazzoG. MeneghessoE. ZanoniM. Meneghini - - Proceedings of the 6th IEEE International Conference on Emerging Electronics (ICEE 2022)
Hot electron effects in AlGaN/GaN HEMTs during hard-switching events 2021 Minetto A.Modolo N.Meneghini M.Zanoni E. + MICROELECTRONICS RELIABILITY - -
Hot-Electron Effects in AlGaN/GaN HEMTs under Semi-ON DC Stress 2020 Modolo N.Nardo A.Meneghini M.Zanoni E. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Hot-electron trapping and electric field redistribution in 0.15 µm RF AlGaN/GaN HEMT with single or double layer AlGaN backbarrier 2022 F. ChiocchettaZ. GaoM. FornasierN. ModoloC. De SantiF. RampazzoM. MeneghiniG. MeneghessoE. Zanoni - - Proceedings of the 2022 International Workshop on Nitride Semiconductors
Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress 2021 Gao Z.Rampazzo F.Meneghini M.Modolo N.De Santi C.Meneghesso G.Zanoni E. + MICROELECTRONICS RELIABILITY - -
Investigation of the degradations in power GaN-on-Si MIS-HEMTs subjected to cumulative γ-ray irradiation 2019 Modolo N.Meneghini M.Meneghesso G.Zanoni E. + MICROELECTRONICS RELIABILITY - -
Modeling Hot-Electron Trapping in GaN-based HEMTs 2022 Modolo N.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS IEEE International Reliability Physics Symposium Proceedings