MODOLO, NICOLA

MODOLO, NICOLA  

Università di Padova  

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Risultati 1 - 20 di 24 (tempo di esecuzione: 0.047 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Investigation of the degradations in power GaN-on-Si MIS-HEMTs subjected to cumulative γ-ray irradiation 2019 Modolo N.Meneghini M.Meneghesso G.Zanoni E. + MICROELECTRONICS RELIABILITY - -
Understanding γ-Ray Induced Instability in AlGaN/GaN HEMTs Using a Physics-Based Compact Model 2020 Modolo N.Meneghini M.Meneghesso G.Zanoni E. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects 2020 Modolo N.Meneghini M.Barbato A.Nardo A.De Santi C.Meneghesso G.Zanoni E. + MICROELECTRONICS RELIABILITY - -
Hot-Electron Effects in AlGaN/GaN HEMTs under Semi-ON DC Stress 2020 Modolo N.Nardo A.Meneghini M.Zanoni E. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs 2020 Modolo, NicolaDe Santi, CarloMeneghini, Matteo + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Understanding the effects of off-state and hard-switching stress in gallium nitride-based power transistors 2020 Modolo N.De Santi C.Minetto A.Meneghesso G.Zanoni E.Meneghini M. + SEMICONDUCTOR SCIENCE AND TECHNOLOGY - -
Drain Field Plate Impact on the Hard-Switching Performance of AlGaN/GaN HEMTs 2021 Minetto A.Modolo N.Meneghini M.Zanoni E. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Hot electron effects in AlGaN/GaN HEMTs during hard-switching events 2021 Minetto A.Modolo N.Meneghini M.Zanoni E. + MICROELECTRONICS RELIABILITY - -
A Generalized Approach to Determine the Switching Reliability of GaN HEMTs on-Wafer Level 2021 Modolo N.Minetto A.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS IEEE International Reliability Physics Symposium Proceedings
Cumulative Hot-Electron Trapping in GaN-Based Power HEMTs Observed by an Ultra-Fast (10V/ns) on-Wafer Methodology 2021 Modolo N.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS - -
Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress 2021 Gao Z.Rampazzo F.Meneghini M.Modolo N.De Santi C.Meneghesso G.Zanoni E. + MICROELECTRONICS RELIABILITY - -
Review on the degradation of GaN-based lateral power transistors 2021 De Santi, C.Buffolo, M.Caria, A.Chiocchetta, F.Favero, D.Fregolent, M.Masin, F.Modolo, N.Nardo, A.Piva, F.Rampazzo, F.Trivellin, N.Gao, Z.Meneghini, M.Zanoni, E.Meneghesso, G. + E-PRIME, ADVANCES IN ELECTRICAL ENGINEERING, ELECTRONICS AND ENERGY - -
Charge trapping in GaN Power Transistors: Challenges and Perspectives 2021 Meneghini, MModolo, NNardo, ADe Santi, CMeneghesso, GZanoni, E + - - 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs 2021 Modolo N.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + IEEE ELECTRON DEVICE LETTERS - -
Hot-electron trapping and electric field redistribution in 0.15 µm RF AlGaN/GaN HEMT with single or double layer AlGaN backbarrier 2022 F. ChiocchettaZ. GaoM. FornasierN. ModoloC. De SantiF. RampazzoM. MeneghiniG. MeneghessoE. Zanoni - - Proceedings of the 2022 International Workshop on Nitride Semiconductors
Defect States Extraction from Stretched Exponential (de)trapping Response 2022 Carlo De SantiNicola ModoloGaudenzio MeneghessoEnrico ZanoniMatteo Meneghini + - - Proceedings of Compound Semiconductor Week 2022
Trap parameter extraction and compact modeling of non-ideal dynamic performance in AlGaN/GaN HEMTs 2022 Carlo De SantiNicola ModoloGiulio BaratellaMatteo BorgaGaudenzio MeneghessoEnrico ZanoniMatteo Meneghini + - - Proceedings of the 2022 International Workshop on Nitride Semiconductors
Physics-based extraction of trap distribution in AlGaN/GaN HEMTs from stretched exponentials 2022 Carlo De SantiNicola ModoloGaudenzio MeneghessoEnrico ZanoniMatteo Meneghini + - - Proceedings of the 2022 International Workshop on Nitride Semiconductors
Deep levels effects and on-wafer reliability of 0.15 um InAlN/GaN and InAlGaN/GaN HEMTs with AlGaN backbarrier for RF applications 2022 Z. GaoF. ChiocchettaM. FornasierM. SaroE. StramareA. TonelloC. SharmaN. ModoloC. De SantiF. RampazzoG. MeneghessoM. MeneghiniE. Zanoni + - - Proceedings of the 2022 International Workshop on Nitride Semiconductors
Modeling Hot-Electron Trapping in GaN-based HEMTs 2022 Modolo N.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS IEEE International Reliability Physics Symposium Proceedings