This work reports on the control of the n-GaN surface using a simple Mg diffusion process. It is shown that the Mg diffusion process enables a GaN surface without Fermi-level pinning. The process results in the realization of n-GaN unipolar camel diodes where increasing the metal work function leads to an incremental barrier height increase. Notably, the camel diode yields a record Schottky barrier height, indicating the possibility of improving the reverse characteristics of future GaN unipolar diodes.
Understanding the Ga Polar n-GaN Surface after Mg Diffusion Process
Fregolent M.;De Santi C.;Meneghini M.;
2025
Abstract
This work reports on the control of the n-GaN surface using a simple Mg diffusion process. It is shown that the Mg diffusion process enables a GaN surface without Fermi-level pinning. The process results in the realization of n-GaN unipolar camel diodes where increasing the metal work function leads to an incremental barrier height increase. Notably, the camel diode yields a record Schottky barrier height, indicating the possibility of improving the reverse characteristics of future GaN unipolar diodes.
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