FREGOLENT, MANUEL

FREGOLENT, MANUEL  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results 2024 Fregolent, ManuelPiva, FrancescoBuffolo, MatteoSanti, Carlo DeCester, AndreaMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + JOURNAL OF PHYSICS D. APPLIED PHYSICS - -
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs 2022 Modolo N.Fregolent M.Masin F.Benato A.Bettini A.Buffolo M.De Santi C.Borga M.Vogrig D.Neviani A.Meneghesso G.Zanoni E.Meneghini M. + MICROELECTRONICS RELIABILITY - -
Carrier capture kinetics, deep levels, and isolation properties of β -Ga2O3Schottky-barrier diodes damaged by nitrogen implantation 2020 De Santi C.Fregolent M.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + APPLIED PHYSICS LETTERS - -
Conduction processes, modeling and deep levels in nitrogen-implanted β-Gallium oxide Schottky diodes 2022 Carlo De SantiManuel FregolentMatteo BuffoloGaudenzio MeneghessoEnrico ZanoniMatteo Meneghini + - - Proceedings of the 4th International Workshop on Gallium Oxide and Related Materials, Nagano, Japan
CONDUCTION PROPERTIES AND THRESHOLD VOLTAGE INSTABILITY IN beta-Ga2O3 MOSFETs 2022 Fregolent, MDe Santi, CMeneghesso, GZanoni, EMeneghini, M + - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings Volume 12002, Oxide-based Materials and Devices XIII
Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al2O3/GaN MOS Capacitors 2023 Fregolent, ManuelMarcuzzi, AlbertoSanti, Carlo DeMeneghesso, GaudenzioZanoni, EnricoBrusaterra, EnricoMeneghini, Matteo + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy 2021 Fregolent M.Buffolo M.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + JOURNAL OF PHYSICS D. APPLIED PHYSICS - -
Deep levels and conduction processes in nitrogen-implanted Ga2O3 Schottky barrier diodes 2022 De Santi, CFregolent, MBuffolo, MMeneghesso, GZanoni, EMeneghini, M + - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings Volume 12002, Oxide-based Materials and Devices XIII
Deep Levels and Threshold Voltage Instability in Vertical a-Plane Oriented GaN MISFETs 2022 Fregolent M.De Santi C.Meneghesso G.Zanoni E.Meneghini M. + - - Proceedings of WOCSDICE-EXMATEC 2022, Ponta Delgada, Azores, Portugal
Dynamic and Capacitive Characterization of 3D GaN n-p-n Vertical Fin-FETs 2021 Fregolent, MDe Santi, CMeneghesso, GZanoni, EMeneghini, M + - - 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
Dynamic performance of wide bandgap devices 2022 C. De SantiM. FregolentN. ModoloA. NardoM. BuffoloF. RampazzoG. MeneghessoE. ZanoniM. Meneghini - - Proceedings of the 6th IEEE International Conference on Emerging Electronics (ICEE 2022)
Experimental and Numerical Analysis of OFFState Bias Induced Instabilities in Vertical GaNon-Si Trench MOSFETs 2024 Fregolent, ManuelFavero, DavideDe Santi, CarloMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + IEEE TRANSACTIONS ON POWER ELECTRONICS - -
Gallium Oxide and Gallium Nitride-based devices for high-power applications: characterization, reliability, and modelling 2024 FREGOLENT, MANUEL - - -
GaN Vertical Devices: challenges for high performance and stability 2023 Matteo MeneghiniManuel FregolentCarlo De SantiMatteo BuffoloAlberto MarcuzziDavide FaveroGaudenzio MeneghessoEnrico Zanoni + - - Proceedings of ICNS-14 conference
Gate leakage modeling in lateral β-Ga2O3 MOSFETs with Al2O3 gate dielectric 2023 Fregolent, ManuelDe Santi, CarloMeneghesso, GaudenzioZanoni, EnricoMeneghini, Matteo + APPLIED PHYSICS LETTERS - -
Impact of thermal annealing on deep levels in nitrogen-implanted β-Ga2O3Schottky barrier diodes 2021 Fregolent M.De Santi C.Buffolo M.Meneghesso G.Zanoni E.Meneghini M. + JOURNAL OF APPLIED PHYSICS - -
Investigation of deep level defects in n-type GaAsBi 2022 Fregolent, MBuffolo, MDe Santi, CMeneghesso, GZanoni, EMeneghini, M + - PROCEEDINGS OF SPIE, THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING Proceedings Volume 12021, Novel In-Plane Semiconductor Lasers XXI
Investigation of Threshold Voltage Instability in GaN-on-Si Trench MOSFETs with SiO2 Gate Dielectric 2024 M. FregolentC. De SantiG. MeneghessoE. ZanoniM. Meneghini + - - Proceedings of the GaN Marathon 2024
Investigation of Wafer-Level Dynamic Properties of p-GaN HEMTs in Hard Switching Conditions 2024 M. BoitoM. FregolentC. De SantiG. MeneghessoE. ZanoniM. Meneghini + - - Proceedings of the GaN Marathon 2024
Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs 2022 Fregolent, MBoito, MMarcuzzi, ADe Santi, CMeneghesso, GZanoni, EMeneghini, M + MICROELECTRONICS RELIABILITY - -