FREGOLENT, MANUEL
FREGOLENT, MANUEL
Università di Padova
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs
2022 Modolo, N.; Fregolent, M.; Masin, F.; Benato, A.; Bettini, A.; Buffolo, M.; De Santi, C.; Borga, M.; Posthuma, N.; Bakeroot, B.; Decoutere, S.; Vogrig, D.; Neviani, A.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Carrier capture kinetics, deep levels, and isolation properties of β -Ga2O3Schottky-barrier diodes damaged by nitrogen implantation
2020 De Santi, C.; Fregolent, M.; Buffolo, M.; Wong, M. H.; Higashiwaki, M.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Conduction processes, modeling and deep levels in nitrogen-implanted β-Gallium oxide Schottky diodes
2022 DE SANTI, Carlo; Fregolent, Manuel; Buffolo, Matteo; Higashiwaki, Masataka; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
CONDUCTION PROPERTIES AND THRESHOLD VOLTAGE INSTABILITY IN beta-Ga2O3 MOSFETs
2022 Fregolent, M; Brusaterra, E; De Santi, C; Tetzner, K; Wurfl, J; Meneghesso, G; Zanoni, E; Meneghini, M
Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy
2021 Fregolent, M.; Buffolo, M.; De Santi, C.; Hasegawa, S.; Matsumura, J.; Nishinaka, H.; Yoshimoto, M.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Deep levels and conduction processes in nitrogen-implanted Ga2O3 Schottky barrier diodes
2022 De Santi, C; Fregolent, M; Buffolo, M; Higashiwaki, M; Meneghesso, G; Zanoni, E; Meneghini, M
Deep Levels and Threshold Voltage Instability in Vertical a-Plane Oriented GaN MISFETs
2022 Fregolent, M.; Munari, G.; Bordignon, T.; De Santi, C.; Bahat Treidel, E.; Hilt, O.; Würfl, J.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Dynamic and Capacitive Characterization of 3D GaN n-p-n Vertical Fin-FETs
2021 Bordignon, T; Fregolent, M; De Santi, C; Strempel, K; Bakin, A; Waag, A; Meneghesso, G; Zanoni, E; Meneghini, M
Impact of thermal annealing on deep levels in nitrogen-implanted β-Ga2O3Schottky barrier diodes
2021 Fregolent, M.; De Santi, C.; Buffolo, M.; Higashiwaki, M.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Investigation of deep level defects in n-type GaAsBi
2022 Fregolent, M; Buffolo, M; De Santi, C; Hasegawa, S; Matsumura, J; Nishinaka, H; Yoshimoto, M; Meneghesso, G; Zanoni, E; Meneghini, M
Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs
2022 Fregolent, M; Boito, M; Marcuzzi, A; De Santi, C; Chiocchetta, F; Treidel, Eb; Wolf, M; Brunner, F; Hilt, O; Wurfl, J; Meneghesso, G; Zanoni, E; Meneghini, M
Logarithmic trapping and detrapping in β-Ga2O3 MOSFETs: Experimental analysis and modeling
2022 Fregolent, Manuel; Brusaterra, Enrico; DE SANTI, Carlo; Tetzner, Kornelius; W??rfl, Joachim; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
Modeling of the Conduction Processes and Deep Levels in Annealed Nitrogen-Implanted β-Gallium Oxide Schottky diodes
2022 De Santi, C.; Fregolent, M.; Buffolo, M.; Higashiwaki, M.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Review on the degradation of GaN-based lateral power transistors
2021 De Santi, C.; Buffolo, M.; Rossetto, I.; Bordignon, T.; Brusaterra, E.; Caria, A.; Chiocchetta, F.; Favero, D.; Fregolent, M.; Masin, F.; Modolo, N.; Nardo, A.; Piva, F.; Rampazzo, F.; Sharma, C.; Trivellin, N.; Gao, Z.; Meneghini, M.; Zanoni, E.; Meneghesso, G.