FREGOLENT, MANUEL
FREGOLENT, MANUEL
Dipartimento di Ingegneria dell'Informazione - DEI
Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results
2024 Fregolent, Manuel; Piva, Francesco; Buffolo, Matteo; Santi, Carlo De; Cester, Andrea; Higashiwaki, Masataka; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs
2022 Modolo, N.; Fregolent, M.; Masin, F.; Benato, A.; Bettini, A.; Buffolo, M.; De Santi, C.; Borga, M.; Posthuma, N.; Bakeroot, B.; Decoutere, S.; Vogrig, D.; Neviani, A.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Carrier capture kinetics, deep levels, and isolation properties of β -Ga2O3Schottky-barrier diodes damaged by nitrogen implantation
2020 De Santi, C.; Fregolent, M.; Buffolo, M.; Wong, M. H.; Higashiwaki, M.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Conduction processes, modeling and deep levels in nitrogen-implanted β-Gallium oxide Schottky diodes
2022 DE SANTI, Carlo; Fregolent, Manuel; Buffolo, Matteo; Higashiwaki, Masataka; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
CONDUCTION PROPERTIES AND THRESHOLD VOLTAGE INSTABILITY IN beta-Ga2O3 MOSFETs
2022 Fregolent, M; Brusaterra, E; De Santi, C; Tetzner, K; Wurfl, J; Meneghesso, G; Zanoni, E; Meneghini, M
Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al2O3/GaN MOS Capacitors
2023 Zagni, Nicolò; Fregolent, Manuel; Verzellesi, Giovanni; Marcuzzi, Alberto; Santi, Carlo De; Meneghesso, Gaudenzio; Zanoni, Enrico; Treidel, Eldad Bahat; Brusaterra, Enrico; Brunner, Frank; Hilt, Oliver; Meneghini, Matteo; Pavan, Paolo
Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy
2021 Fregolent, M.; Buffolo, M.; De Santi, C.; Hasegawa, S.; Matsumura, J.; Nishinaka, H.; Yoshimoto, M.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Deep levels and conduction processes in nitrogen-implanted Ga2O3 Schottky barrier diodes
2022 De Santi, C; Fregolent, M; Buffolo, M; Higashiwaki, M; Meneghesso, G; Zanoni, E; Meneghini, M
Deep Levels and Threshold Voltage Instability in Vertical a-Plane Oriented GaN MISFETs
2022 Fregolent, M.; Munari, G.; Bordignon, T.; De Santi, C.; Bahat Treidel, E.; Hilt, O.; Würfl, J.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Dynamic and Capacitive Characterization of 3D GaN n-p-n Vertical Fin-FETs
2021 Bordignon, T; Fregolent, M; De Santi, C; Strempel, K; Bakin, A; Waag, A; Meneghesso, G; Zanoni, E; Meneghini, M
Dynamic performance of wide bandgap devices
2022 De Santi, C.; Fregolent, M.; Modolo, N.; Nardo, A.; Buffolo, M.; Rampazzo, F.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Experimental and Numerical Analysis of OFFState Bias Induced Instabilities in Vertical GaNon-Si Trench MOSFETs
2024 Zagni, Nicolò; Fregolent, Manuel; Verzellesi, Giovanni; Bergamin, Francesco; Favero, Davide; De Santi, Carlo; Meneghesso, Gaudenzio; Zanoni, Enrico; Huber, Christian; Meneghini, Matteo; Pavan, Paolo
Gallium Oxide and Gallium Nitride-based devices for high-power applications: characterization, reliability, and modelling
2024 Fregolent, Manuel
GaN Vertical Devices: challenges for high performance and stability
2023 Meneghini, Matteo; Fregolent, Manuel; Zagni, Nicolò; DE SANTI, Carlo; Bahat Treidel, Eldad; Brusaterra, Enrico; Brunner, Frank; Hilt, Oliver; Christianhuber, ; Buffolo, Matteo; Marcuzzi, Alberto; Favero, Davide; Del Fiol, Andrea; Verzellesi, Giovanni; Pavan, Paolo; Meneghesso, Gaudenzio; Zanoni, Enrico
Gate leakage modeling in lateral β-Ga2O3 MOSFETs with Al2O3 gate dielectric
2023 Fregolent, Manuel; Brusaterra, Enrico; De Santi, Carlo; Tetzner, Kornelius; Würfl, Joachim; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
Impact of thermal annealing on deep levels in nitrogen-implanted β-Ga2O3Schottky barrier diodes
2021 Fregolent, M.; De Santi, C.; Buffolo, M.; Higashiwaki, M.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Investigation of deep level defects in n-type GaAsBi
2022 Fregolent, M; Buffolo, M; De Santi, C; Hasegawa, S; Matsumura, J; Nishinaka, H; Yoshimoto, M; Meneghesso, G; Zanoni, E; Meneghini, M
Investigation of Threshold Voltage Instability in GaN-on-Si Trench MOSFETs with SiO2 Gate Dielectric
2024 Fregolent, M.; Del Fiol, A.; De Santi, C.; Huber, C.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Investigation of Wafer-Level Dynamic Properties of p-GaN HEMTs in Hard Switching Conditions
2024 Boito, M.; Fregolent, M.; De Santi, C.; Abbisogni, A.; Smerzi, S.; Rossetto, I.; Iucolano, F.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs
2022 Fregolent, M; Boito, M; Marcuzzi, A; De Santi, C; Chiocchetta, F; Treidel, Eb; Wolf, M; Brunner, F; Hilt, O; Wurfl, J; Meneghesso, G; Zanoni, E; Meneghini, M