DE SANTI, CARLO
 Distribuzione geografica
Continente #
NA - Nord America 278
EU - Europa 148
AS - Asia 28
SA - Sud America 2
AF - Africa 1
Totale 457
Nazione #
US - Stati Uniti d'America 276
IE - Irlanda 81
IT - Italia 27
FR - Francia 14
CN - Cina 13
DE - Germania 11
JP - Giappone 4
FI - Finlandia 3
IN - India 3
NL - Olanda 3
RU - Federazione Russa 3
CA - Canada 2
HK - Hong Kong 2
SA - Arabia Saudita 2
AE - Emirati Arabi Uniti 1
AR - Argentina 1
AT - Austria 1
BR - Brasile 1
CZ - Repubblica Ceca 1
DK - Danimarca 1
GB - Regno Unito 1
GR - Grecia 1
KR - Corea 1
SE - Svezia 1
TH - Thailandia 1
TW - Taiwan 1
ZA - Sudafrica 1
Totale 457
Città #
Dublin 81
Ashburn 56
Fairfield 26
Santa Cruz 24
Houston 21
Ann Arbor 14
Padova 13
San Diego 12
Seattle 9
Des Moines 8
Cambridge 7
Woodbridge 7
Beijing 6
Wilmington 6
Tappahannock 4
Chicago 3
Helsinki 3
Los Angeles 3
Rome 3
Buffalo 2
Cervignano 2
Council Bluffs 2
Delhi 2
Hefei 2
Hiratsuka 2
Las Vegas 2
Magdeburg 2
Paris 2
Saint Petersburg 2
At Tuwal 1
Athens 1
Bangkok 1
Bengaluru 1
Boulder 1
Büdelsdorf 1
Castrocielo 1
Chiampo 1
Chongqing 1
Clearwater 1
Cleveland 1
Créteil 1
Dallas 1
Dieppe 1
Falls Church 1
Fano 1
Göteborg 1
Jaboatao dos Guararapes 1
Kirkland 1
Kobe 1
Kolding 1
Lake Forest 1
Messina 1
Moscow 1
Munich 1
New Haven 1
Norwalk 1
Norwich 1
Nuremberg 1
Olbersdorf 1
Ottawa 1
Oude Meer 1
Provo 1
Ravenna 1
Riva 1
Roermond 1
San Francisco 1
Santee 1
Shanghai 1
Silverton 1
Taipei 1
Toronto 1
Villa General Ramírez 1
Villach 1
Wuhan 1
Totale 371
Nome #
The 2018 GaN power electronics roadmap, file e14fb26f-91aa-3de1-e053-1705fe0ac030 123
Characterization of charge trapping mechanisms in GaN vertical Fin FETs under positive gate bias, file e14fb26c-c647-3de1-e053-1705fe0ac030 106
Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices, file d1ec4c6e-7de4-492c-8d52-8a1880be5419 83
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs, file e14fb26c-ba30-3de1-e053-1705fe0ac030 73
Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices, file e14fb26c-bafa-3de1-e053-1705fe0ac030 68
Degradation mechanisms of devices for optoelectronics and power electronics based on Gallium Nitride heterostructures, file e14fb26f-da25-3de1-e053-1705fe0ac030 12
Gradual Degradation of InGaAs LEDs: Impact on Non-Radiative Lifetime and Extraction of Defect Characteristics, file e14fb270-4c23-3de1-e053-1705fe0ac030 4
Characterization of charge trapping mechanisms in GaN vertical Fin FETs under positive gate bias, file e14fb26c-a79f-3de1-e053-1705fe0ac030 3
Glass-ceramic composites for high-power white-light-emitting diodes, file e14fb26e-bf53-3de1-e053-1705fe0ac030 3
Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives, file cc36c89f-cf78-4227-bae3-cd9705d5a34e 1
Totale 476
Categoria #
all - tutte 1.543
article - articoli 1.348
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 2.891


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20202 0 0 0 0 0 0 0 0 0 2 0 0
2020/202140 1 2 2 2 1 0 0 5 7 3 15 2
2021/2022158 6 7 6 31 26 6 12 11 6 6 27 14
2022/2023212 5 3 27 18 12 11 50 32 24 8 14 8
2023/202464 3 5 6 7 4 9 6 7 9 8 0 0
Totale 476