DE SANTI, CARLO
 Distribuzione geografica
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Continente #
NA - Nord America 12.029
EU - Europa 3.767
AS - Asia 1.399
SA - Sud America 13
OC - Oceania 9
AF - Africa 6
Continente sconosciuto - Info sul continente non disponibili 4
Totale 17.227
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Nazione #
US - Stati Uniti d'America 12.013
IT - Italia 1.590
IE - Irlanda 1.136
CN - Cina 829
FI - Finlandia 235
DE - Germania 199
GB - Regno Unito 158
IN - India 146
SE - Svezia 125
JP - Giappone 93
TW - Taiwan 89
UA - Ucraina 85
KR - Corea 77
FR - Francia 65
VN - Vietnam 50
HK - Hong Kong 45
NL - Olanda 34
BE - Belgio 29
GR - Grecia 23
CH - Svizzera 22
SG - Singapore 20
BR - Brasile 11
CA - Canada 11
PL - Polonia 11
AT - Austria 10
ID - Indonesia 9
IL - Israele 9
RU - Federazione Russa 7
SA - Arabia Saudita 7
AU - Australia 6
RO - Romania 6
BD - Bangladesh 5
LT - Lituania 5
MX - Messico 5
NO - Norvegia 5
CY - Cipro 4
DK - Danimarca 4
MA - Marocco 4
MD - Moldavia 3
MY - Malesia 3
NZ - Nuova Zelanda 3
RS - Serbia 3
A2 - ???statistics.table.value.countryCode.A2??? 2
BG - Bulgaria 2
CZ - Repubblica Ceca 2
ES - Italia 2
EU - Europa 2
IR - Iran 2
TH - Thailandia 2
TR - Turchia 2
AF - Afghanistan, Repubblica islamica di 1
BH - Bahrain 1
CO - Colombia 1
EC - Ecuador 1
EG - Egitto 1
HR - Croazia 1
HU - Ungheria 1
IM - Isola di Man 1
IQ - Iraq 1
KE - Kenya 1
KZ - Kazakistan 1
MO - Macao, regione amministrativa speciale della Cina 1
NP - Nepal 1
OM - Oman 1
PT - Portogallo 1
SI - Slovenia 1
SK - Slovacchia (Repubblica Slovacca) 1
Totale 17.227
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Città #
Fairfield 2.156
Woodbridge 1.224
Dublin 1.133
Ashburn 1.080
Houston 995
Chandler 914
Seattle 763
Cambridge 752
Ann Arbor 707
Padova 586
Wilmington 585
Beijing 399
Princeton 256
Medford 252
San Diego 252
Des Moines 194
Helsinki 147
Guangzhou 104
Leesburg 102
Boardman 99
Nanjing 71
New York 63
Roxbury 57
Shanghai 52
London 49
Dong Ket 47
Pune 45
Washington 40
Jacksonville 32
Mumbai 31
Hsinchu 30
Milan 25
Los Angeles 24
Nanchang 22
Tokyo 22
Turin 22
Central 21
Pignone 21
Shenyang 21
Tianjin 19
Kharkiv 18
Lappeenranta 18
Norwalk 18
Palermo 18
Munich 17
Ogden 17
Parma 17
Arzignano 16
Cremona 16
Borås 15
Sarcedo 15
Tappahannock 14
Jiaxing 13
Thessaloniki 13
Chicago 12
Hebei 12
Stuttgart 12
Azzano Decimo 11
Rome 11
Taichung 11
Berlin 10
Bristol 10
Cagliari 10
Chiswick 10
Frankfurt am Main 10
Grenoble 10
Hwaseong-si 10
Kanpur 10
Kilburn 10
Paris 10
Patna 10
Prescot 10
Zurich 10
Dongjak-gu 9
Hangzhou 9
Ma On Shan 9
Phoenix 9
Seoul 9
Taipei 9
Warsaw 9
Yangmei District 9
Agordo 8
Blaustein 8
Changsha 8
Hounslow 8
Jinan 8
Yongin-si 8
Chennai 7
Chiampo 7
Gorizia 7
Indiana 7
Leuven 7
New Delhi 7
Reggio Emilia 7
San Jose 7
Albuquerque 6
Basel 6
Bologna 6
Brussels 6
Delhi 6
Totale 14.044
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Nome #
Vertical GaN devices: Process and reliability 350
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs 277
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs 233
Semi-Transparent Perovskite Solar Cells: Performance and Perspectives 197
Root cause analysis of gate shorts in semi-vertical GaN MOSFET devices 190
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress 152
Variations in junction capacitance and doping activation associated with electrical stress of InGaN/GaN laser diodes 137
GaN-HEMTs devices with single- and double-heterostructure for power switching applications 136
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry 136
Defects in GaN-based LEDs: Impact on internal quantum efficiency and on reliability 121
Evidence for defect-assisted tunneling and recombination at extremely low current in InGaN/GaN-based LEDs 119
Demonstration of avalanche capability in polarization-doped vertical GaN pn diodes: Study of walkout due to residual carbon concentration 118
Analysis of the mechanisms limiting the reliability of retrofit LED lamps 117
Towards high reliability GaN LEDs: Understanding the physical origin of gradual and catastrophic failure 117
Recoverable degradation of blue InGaN-based light emitting diodes submitted to 3MeV proton irradiation 115
Positive and negative threshold voltage instabilities in GaN-based transistors 115
Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements 113
Degradation physics of GaN-based lateral and vertical devices 109
Degradation mechanisms and lifetime of state-of-the-art green laser diodes 108
Reliability of blue-emitting Eu2+-doped phosphors for laser-lighting applications 108
Gate Reliability of p-GaN Gate AlGaN/GaN High Electron Mobility Transistors 107
Ageing of InGaN-based LEDs: Effects on internal quantum efficiency and role of defects 107
Time- and Field-Dependent Trapping in GaN-Based Enhancement-Mode Transistors With p-Gate 106
Performance-Limiting Traps in GaN-Based HEMTs: From Native Defects to Common Impurities 105
Failure causes and mechanisms of retrofit LED lamps 104
Evidence for avalanche generation in reverse-biased InGaN LEDs 103
Defect-Related Degradation of AlGaN-Based UV-B LEDs 102
Laser-based lighting: Experimental analysis and perspectives 101
Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate 100
Aging behavior, reliability, and failure physics of GaN-based optoelectronic components 98
GaN-based laser wireless power transfer system 98
Demonstration of UV-Induced Threshold Voltage Instabilities in Vertical GaN Nanowire Array-Based Transistors 97
Study and characterization of GaN MOS capacitors: Planar vs trench topographies 95
Defect-related degradation of III-V/Silicon 1.55 μm DBR laser diodes 94
Power GaN HEMT degradation: From time-dependent breakdown to hot-electron effects 94
Evidence of Hot-Electron Effects during Hard Switching of AlGaN/GaN HEMTs 94
Degradation processes and origin in InGaN-based high-power photodetectors 93
GaN HEMTs with p-GaN gate: Field-And time-dependent degradation 92
GaN-based lateral and vertical devices: physical mechanisms limiting stability and reliability 92
Degradation of InGaN lasers: Role of non-radiative recombination and injection efficiency 91
A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires 91
Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications 91
Reliability and failure analysis in power GaN-HEMTs: An overview 91
Multi-gate Enhancement Mode AlGaN/GaN HEMT 90
Chip-Level Degradation of InGaN-Based Optoelectronic Devices 90
Deep level transient spectroscopy on light-emitting diodes based on (In,Ga)N/GaN nanowire ensembles 89
Investigation of the deep level involved in InGaN laser degradation by deep level transient spectroscopy 89
Investigation of the time-dependent failure of InGaN-based LEDs submitted to reverse-bias stress 88
Challenges for highly reliable GaN-based LEDs 88
Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage 87
Defect generation in deep-UV AlGaN-based LEDs investigated by electrical and spectroscopic characterisation 87
Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis 87
Defect-generation and diffusion in (In)AlGaN-based UV-B LEDs submitted to constant current stress 86
Internal checkup illumination sources for METIS coronagraph on solar orbiter 86
Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework 86
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs 85
Experimental observation of TDDB-like behavior in reverse-biased green InGaN LEDs 83
Long-term degradation mechanisms of mid-power LEDs for lighting applications 82
Understanding the degradation processes of GaN based LEDs submitted to extremely high current density 82
GaN-based InGaN/GaN MQWs solar cells for innovative applications: performance and modeling 81
Physical effects limiting performance and reliability of GaN High Electron Mobility Transistors 81
2DEG Retraction and Potential Distribution of GaN-on-Si HEMTs Investigated Through a Floating Gate Terminal 81
Physical mechanisms limiting the performance and the reliability of GaN-based LEDs 81
Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress 81
Trapping processes related to iron and carbon doping in AlGaN/GaN power HEMTs 80
Reliability of Ultraviolet Light-Emitting Diodes 80
Field-dependent degradation mechanisms in GaN-based HEMTs 79
ESD on GaN-based LEDs: An analysis based on dynamic electroluminescence measurements and current waveforms 77
Degradation of GaN-on-GaN vertical diodes submitted to high current stress 77
Origin of the low-forward leakage current in InGaN-based LEDs 77
Enhanced semiclassical simulation of InGaN/GaN multi-quantum-well solar cells 77
Long-term degradation of InGaN-based laser diodes: Role of defects 75
Degradation of vertical GaN FETs under gate and drain stress 74
Degradation of InGaN-based LEDs related to charge diffusion and build-up 74
Investigation of Current-Driven Degradation of 1.3 μm Quantum-Dot Lasers Epitaxially Grown on Silicon 74
Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs 74
Current induced degradation study on state of the art DUV LEDs 73
Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs 73
Breakdown Walkout in Polarization-Doped Vertical GaN Diodes 73
Exploration of gate trench module for vertical GaN devices 73
Defect incorporation in In-containing layers and quantum wells: Experimental analysis via deep level profiling and optical spectroscopy 72
Thermal droop in InGaN-based LEDs: Physical origin and dependence on material properties 71
Physical origin of the optical degradation of InAs quantum dot lasers 71
Reliability comparison of AlGaN/GaN HEMTs with different carbon doping concentration 71
Investigation into trapping modes and threshold instabilities of state-of-art commercial GaN HEMTs 70
The 2018 GaN power electronics roadmap 70
Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices 69
Gate frequency sweep: An effective method to evaluate the dynamic performance of AlGaN/GaN power heterojunction field effect transistors 69
A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications 69
Evidence of optically induced degradation in gallium nitride optoelectronic devices 69
High-Current Stress of UV-B (In)AlGaN-Based LEDs: Defect-Generation and Diffusion Processes 68
Characterization of charge trapping mechanisms in GaN vertical Fin FETs under positive gate bias 68
Role of defects in the thermal droop of InGaN-based light emitting diodes 67
Analysis of the deep level responsible for the degradation of InGaN-based laser diodes by DLTS 67
Failure limits and electro-optical characteristics of GaN-based LEDs under electrical overstress 67
Deep levels effects and on-wafer reliability of 0.15 um InAlN/GaN and InAlGaN/GaN HEMTs with AlGaN backbarrier for RF applications 66
Reliability of High Power LEDs: from gradual to catastrophic failure 66
Recombination mechanisms and thermal droop in ALGaN-based UV-B LEDs 66
Observation of hot electron and impact ionization in N-Polar GaN MIS-HEMTs 66
Impact of dislocations on DLTS spectra and degradation of InGaN-based laser diodes 66
Totale 9.682
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Categoria #
all - tutte 72.982
article - articoli 38.953
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.402
Totale 113.337
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019939 0 0 0 0 0 0 0 0 0 203 412 324
2019/20203.058 302 107 36 217 267 162 227 293 407 722 177 141
2020/20212.585 175 163 141 118 61 45 358 400 293 220 267 344
2021/20222.972 94 323 402 213 107 136 204 336 148 91 271 647
2022/20233.222 445 91 97 186 488 346 223 300 432 61 331 222
2023/20243.337 306 535 454 377 285 466 304 172 189 249 0 0
Totale 17.625