We present a detailed analysis of the gradual degradation mechanisms of InGaAs Light-Emitting Diodes (LEDs) tuned for optical emission in the 1.45-1.65 mu m range. Specifically, we propose a simple and effective methodology for estimating the relative changes in non-radiative lifetime, and a procedure for extracting the properties of defects responsible for Shockley-Read-Hall recombination. By means of a series of accelerated aging experiments, during which we evaluated the variations of the optical and electrical characteristics of three different families of LEDs, we were able to identify the root causes of device degradation. Specifically, the experimental results show that, both for longer stress time at moderate currents or for short-term stress under high injection levels, all the devices are affected: (i) by a partial recovery of the optical emission at the nominal bias current; and (ii) by a decrease in the emission in low-bias regime. This second process was deeply investigated, and was found to be related to the decrease in the non-radiative Shockley-Read-Hall (SRH) lifetime due to the generation/propagation of defects within the active region of the LEDs. Devices tuned for longer-wavelength emission exhibited a second degradation process, which was found to modify the carrier injection dynamics and further speed-up optical degradation in the low bias regime. These processes were ascribed to the effects of a second non-radiative recombination center, whose formation within the active region of the device was induced by the aging procedure. Through mathematical analysis of the degradation data, we could quantify the percentage variation in SRH lifetime, and identify the activation energy of the related defects.

Gradual Degradation of InGaAs LEDs: Impact on Non-Radiative Lifetime and Extraction of Defect Characteristics

Buffolo, Matteo
;
De Santi, Carlo;Meneghesso, Gaudenzio;Zanoni, Enrico;Meneghini, Matteo
2021

Abstract

We present a detailed analysis of the gradual degradation mechanisms of InGaAs Light-Emitting Diodes (LEDs) tuned for optical emission in the 1.45-1.65 mu m range. Specifically, we propose a simple and effective methodology for estimating the relative changes in non-radiative lifetime, and a procedure for extracting the properties of defects responsible for Shockley-Read-Hall recombination. By means of a series of accelerated aging experiments, during which we evaluated the variations of the optical and electrical characteristics of three different families of LEDs, we were able to identify the root causes of device degradation. Specifically, the experimental results show that, both for longer stress time at moderate currents or for short-term stress under high injection levels, all the devices are affected: (i) by a partial recovery of the optical emission at the nominal bias current; and (ii) by a decrease in the emission in low-bias regime. This second process was deeply investigated, and was found to be related to the decrease in the non-radiative Shockley-Read-Hall (SRH) lifetime due to the generation/propagation of defects within the active region of the LEDs. Devices tuned for longer-wavelength emission exhibited a second degradation process, which was found to modify the carrier injection dynamics and further speed-up optical degradation in the low bias regime. These processes were ascribed to the effects of a second non-radiative recombination center, whose formation within the active region of the device was induced by the aging procedure. Through mathematical analysis of the degradation data, we could quantify the percentage variation in SRH lifetime, and identify the activation energy of the related defects.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/3445173
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