ZANANDREA, ALBERTO
 Distribuzione geografica
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Continente #
NA - Nord America 1.143
AS - Asia 413
EU - Europa 311
AF - Africa 71
SA - Sud America 53
OC - Oceania 11
Continente sconosciuto - Info sul continente non disponibili 8
Totale 2.010
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Nazione #
US - Stati Uniti d'America 1.100
SG - Singapore 151
CN - Cina 94
IT - Italia 61
HK - Hong Kong 48
DE - Germania 36
FI - Finlandia 34
PL - Polonia 30
BR - Brasile 27
RU - Federazione Russa 15
TW - Taiwan 15
FR - Francia 14
GB - Regno Unito 14
IN - India 14
SE - Svezia 13
JP - Giappone 12
IE - Irlanda 10
KR - Corea 9
NL - Olanda 9
AL - Albania 6
GE - Georgia 6
GM - Gambi 6
UA - Ucraina 6
AT - Austria 5
CA - Canada 5
CO - Colombia 5
ID - Indonesia 5
MR - Mauritania 5
MX - Messico 5
UZ - Uzbekistan 5
AM - Armenia 4
AU - Australia 4
BZ - Belize 4
CR - Costa Rica 4
CZ - Repubblica Ceca 4
DO - Repubblica Dominicana 4
ES - Italia 4
IQ - Iraq 4
LA - Repubblica Popolare Democratica del Laos 4
LU - Lussemburgo 4
MK - Macedonia 4
PT - Portogallo 4
RS - Serbia 4
SK - Slovacchia (Repubblica Slovacca) 4
TR - Turchia 4
UY - Uruguay 4
VE - Venezuela 4
XK - ???statistics.table.value.countryCode.XK??? 4
ZA - Sudafrica 4
AO - Angola 3
AR - Argentina 3
CH - Svizzera 3
CI - Costa d'Avorio 3
CM - Camerun 3
DJ - Gibuti 3
GF - Guiana Francese 3
GN - Guinea 3
IS - Islanda 3
KE - Kenya 3
LV - Lettonia 3
MN - Mongolia 3
MU - Mauritius 3
NZ - Nuova Zelanda 3
PE - Perù 3
PH - Filippine 3
SO - Somalia 3
TJ - Tagikistan 3
TZ - Tanzania 3
VN - Vietnam 3
AE - Emirati Arabi Uniti 2
AZ - Azerbaigian 2
BG - Bulgaria 2
BJ - Benin 2
CV - Capo Verde 2
CW - ???statistics.table.value.countryCode.CW??? 2
CY - Cipro 2
DM - Dominica 2
EC - Ecuador 2
EE - Estonia 2
EU - Europa 2
GH - Ghana 2
GP - Guadalupe 2
GR - Grecia 2
HN - Honduras 2
HR - Croazia 2
HT - Haiti 2
HU - Ungheria 2
IR - Iran 2
JM - Giamaica 2
JO - Giordania 2
KG - Kirghizistan 2
KZ - Kazakistan 2
LC - Santa Lucia 2
LY - Libia 2
ML - Mali 2
MZ - Mozambico 2
NI - Nicaragua 2
NP - Nepal 2
PF - Polinesia Francese 2
PK - Pakistan 2
Totale 1.963
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Città #
Woodbridge 130
Ann Arbor 124
Houston 122
Fairfield 119
Ashburn 83
Singapore 80
Seattle 78
Wilmington 54
Santa Clara 51
Chandler 48
Cambridge 46
Hong Kong 44
Beijing 37
Bytom 26
Boardman 25
Des Moines 19
Helsinki 19
Medford 15
Princeton 15
Padova 12
San Diego 12
Los Angeles 11
Dublin 10
Nanjing 10
Tokyo 7
Cagliari 6
Mestre 6
Modena 6
Delhi 5
Nouakchott 5
Tashkent 5
Brooklyn 4
Council Bluffs 4
Guangzhou 4
Hefei 4
Montevideo 4
Munich 4
Shenyang 4
Taichung 4
Tbilisi 4
Vientiane 4
Yerevan 4
Abidjan 3
Bandung 3
Belize City 3
Bratislava 3
Cayenne 3
Conakry 3
Daegu 3
Dar es Salaam 3
Dushanbe 3
Falkenstein 3
Hebei 3
Hsinchu 3
Istanbul 3
Luanda 3
Mogadishu 3
Nairobi 3
Parma 3
Riga 3
San José 3
Santo Domingo 3
Shanghai 3
Skopje 3
São Paulo 3
Taipei 3
Tirana 3
Tomsk 3
Toronto 3
Ulan Bator 3
Vienna 3
Accra 2
Almaty 2
Amman 2
Baku 2
Bamako 2
Banjul 2
Bishkek 2
Borås 2
Brisbane 2
Castries 2
Central 2
Changsha 2
Chennai 2
Dallas 2
Dili 2
Djibouti 2
Farra di Soligo 2
Fremont 2
Grenoble 2
Indiana 2
Johannesburg 2
Kaohsiung 2
Kigali 2
Kilburn 2
Kingston 2
Leawood 2
Les Abymes 2
Lima 2
Lisbon 2
Totale 1.419
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Nome #
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress 222
GaN-HEMTs devices with single- and double-heterostructure for power switching applications 198
GaN-Based Power HEMTs: Parasitic, Reliability and High Field Issues 166
Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown Conditions 162
Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs 159
Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate 147
Open issues in GaN-based HEMTs: performances, parasitics and reliability 138
Single- and double-heterostructure GaN-HEMTs devices for power switching applications 137
Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences 126
Characterization Of Gan-Based Single- And Double-Heterostructure Devices 105
Degradation of AlGaN/GaN HET devices: role of reverse vias and hot electron stress 99
Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMTThe 1st IEEE Workshop on Wide Bandgap Power Devices and Applications 97
DC and Pulsed Characterization of GaN-based Single- and Double- Heterostructure Devices 92
Degradation of AlInN/AlN/GaN High Electron Mobility Transistors under Proton Irradiation 91
Evidence for breakdown luminescence in AlGaN/GaN HEMTs 79
Totale 2.018
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Categoria #
all - tutte 6.539
article - articoli 3.172
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 9.711
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202190 0 0 0 7 8 11 8 12 15 6 14 9
2021/2022174 7 24 30 13 5 6 7 20 9 2 14 37
2022/2023145 22 4 4 8 34 26 3 10 27 0 6 1
2023/2024101 18 11 4 9 5 5 18 6 2 6 6 11
2024/2025379 2 37 17 21 53 34 16 40 20 11 61 67
2025/2026424 42 141 156 85 0 0 0 0 0 0 0 0
Totale 2.018