statistiche ricercatore

Continente	#
NA - Nord America	960
EU - Europa	155
AS - Asia	73
Continente sconosciuto - Info sul continente non disponibili	2
Totale	1.190

Nome	#
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress	152
GaN-HEMTs devices with single- and double-heterostructure for power switching applications	136
GaN-Based Power HEMTs: Parasitic, Reliability and High Field Issues	109
Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown Conditions	108
Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs	101
Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate	91
Single- and double-heterostructure GaN-HEMTs devices for power switching applications	86
Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences	74
Characterization Of Gan-Based Single- And Double-Heterostructure Devices	64
Open issues in GaN-based HEMTs: performances, parasitics and reliability	54
Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMTThe 1st IEEE Workshop on Wide Bandgap Power Devices and Applications	53
Degradation of AlGaN/GaN HET devices: role of reverse vias and hot electron stress	52
DC and Pulsed Characterization of GaN-based Single- and Double- Heterostructure Devices	45
Degradation of AlInN/AlN/GaN High Electron Mobility Transistors under Proton Irradiation	37
Evidence for breakdown luminescence in AlGaN/GaN HEMTs	36
Totale	1.198

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2018/2019	59	0	0	0	0	0	0	0	0	0	0	31	28
2019/2020	310	32	9	4	81	28	16	18	29	26	27	35	5
2020/2021	114	7	11	6	7	8	11	8	12	15	6	14	9
2021/2022	174	7	24	30	13	5	6	7	20	9	2	14	37
2022/2023	145	22	4	4	8	34	26	3	10	27	0	6	1
2023/2024	84	18	11	4	9	5	5	18	6	2	6	0	0
Totale													1.198