ZANANDREA, ALBERTO

ZANANDREA, ALBERTO  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Risultati 1 - 15 di 15 (tempo di esecuzione: 0.027 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Characterization Of Gan-Based Single- And Double-Heterostructure Devices 2012 ZANANDREA, ALBERTORAMPAZZO, FABIANASTOCCO, ANTONIOMENEGHINI, MATTEOZANONI, ENRICOMENEGHESSO, GAUDENZIO + - - -
Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate 2013 ROSSETTO, ISABELLARAMPAZZO, FABIANASILVESTRI, RICCARDOZANANDREA, ALBERTOMENEGHINI, MATTEOZANONI, ENRICOMENEGHESSO, GAUDENZIO + MICROELECTRONICS RELIABILITY - -
DC and Pulsed Characterization of GaN-based Single- and Double- Heterostructure Devices 2011 ZANANDREA, ALBERTORAMPAZZO, FABIANASTOCCO, ANTONIOZANONI, ENRICOBISI, DAVIDEMENEGHESSO, GAUDENZIO + - - 20th European Heterostructure Technology meeting (HeTech 2011)
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress 2013 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOSTOCCO, ANTONIOBISI, DAVIDEDE SANTI, CARLOROSSETTO, ISABELLAZANANDREA, ALBERTORAMPAZZO, FABIANAZANONI, ENRICO MICROELECTRONIC ENGINEERING - -
Degradation of AlGaN/GaN HET devices: role of reverse vias and hot electron stress 2013 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOSTOCCO, ANTONIOBISI, DAVIDEDE SANTI, CARLOROSSETTO, ISABELLAZANANDREA, ALBERTOCESTER, ANDREARAMPAZZO, FABIANAZANONI, ENRICO - - 18th Conference of "Insulating Films on Semiconductors" (INFOS2013)
Degradation of AlInN/AlN/GaN High Electron Mobility Transistors under Proton Irradiation 2012 ZANANDREA, ALBERTOGERARDIN, SIMONERAMPAZZO, FABIANAMENEGHESSO, GAUDENZIOZANONI, ENRICOPACCAGNELLA, ALESSANDRO - - RADECS 2012, 21st European Conference on Radiation And Its Effects On Components And Systems
Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences 2014 ROSSETTO, ISABELLARAMPAZZO, FABIANAGERARDIN, SIMONEMENEGHINI, MATTEOBAGATIN, MARTAZANANDREA, ALBERTOPACCAGNELLA, ALESSANDROMENEGHESSO, GAUDENZIOZANONI, ENRICO + PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE - 2014 44th European Solid State Device Research Conference (ESSDERC)
Electrical and Electroluminescence Characteristics of AlGaN/GaN High Electron Mobility Transistors Operated in Sustainable Breakdown Conditions 2013 MENEGHINI, MATTEOZANANDREA, ALBERTORAMPAZZO, FABIANASTOCCO, ANTONIOBERTIN, MARCOCIBIN, GIULIAZANONI, ENRICOMENEGHESSO, GAUDENZIO + JAPANESE JOURNAL OF APPLIED PHYSICS. PART 1, REGULAR PAPERS & SHORT NOTES - -
Evidence for breakdown luminescence in AlGaN/GaN HEMTs 2012 MENEGHINI, MATTEOZANANDREA, ALBERTORAMPAZZO, FABIANASTOCCO, ANTONIOBERTIN, MARCOZANONI, ENRICOMENEGHESSO, GAUDENZIO + - - IWN2012 International Workshop on Nitride Semiconductors
GaN-Based Power HEMTs: Parasitic, Reliability and High Field Issues 2013 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOBISI, DAVIDESILVESTRI, RICCARDOZANANDREA, ALBERTOZANONI, ENRICO + ECS TRANSACTIONS - -
GaN-HEMTs devices with single- and double-heterostructure for power switching applications 2013 MENEGHESSO, GAUDENZIOZANANDREA, ALBERTOSTOCCO, ANTONIOROSSETTO, ISABELLADE SANTI, CARLORAMPAZZO, FABIANAMENEGHINI, MATTEOZANONI, ENRICO + - - 2013 IEEE International Reliability Physics Symposium, IRPS 2013
Impact of proton fluence on DC and trapping characteristics in InAlN/GaN HEMTs 2015 ROSSETTO, ISABELLARAMPAZZO, FABIANAGERARDIN, SIMONEMENEGHINI, MATTEOBAGATIN, MARTAZANANDREA, ALBERTOPACCAGNELLA, ALESSANDROMENEGHESSO, GAUDENZIOZANONI, ENRICO + SOLID-STATE ELECTRONICS - -
Influence of properties of Si<inf>3</inf>N<inf>4</inf> passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMTThe 1st IEEE Workshop on Wide Bandgap Power Devices and Applications 2013 STOCCO, ANTONIORAMPAZZO, FABIANAZANANDREA, ALBERTOZANONI, ENRICOMENEGHESSO, GAUDENZIO + - - The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications
Open issues in GaN-based HEMTs: performances, parasitics and reliability 2014 Zanandrea, Alberto - - -
Single- and double-heterostructure GaN-HEMTs devices for power switching applications 2012 ZANANDREA, ALBERTORAMPAZZO, FABIANASTOCCO, ANTONIOMENEGHINI, MATTEOZANONI, ENRICOMENEGHESSO, GAUDENZIO + MICROELECTRONICS RELIABILITY - -