In this paper we report the DC and pulsed characterization of devices fabricated from 5 different GaN-based single-(SH) and double-heterostructure(DH) epitaxial designs(Fig. 1). DC tests enlighten higher saturation current and also sub-threshold leakage currents in SH devices as compared to DH. Moreover, the presence of kink effect, quite pronounced on uncapped wafers, suggests that the application of a GaN capping layer effectively reduces surface charge trapping phenomena. Pulsed measurements show charge release at higher voltages due to a field assisted detrapping.

DC and Pulsed Characterization of GaN-based Single- and Double- Heterostructure Devices

ZANANDREA, ALBERTO;RAMPAZZO, FABIANA;STOCCO, ANTONIO;ZANONI, ENRICO;BISI, DAVIDE;MENEGHESSO, GAUDENZIO
2011

Abstract

In this paper we report the DC and pulsed characterization of devices fabricated from 5 different GaN-based single-(SH) and double-heterostructure(DH) epitaxial designs(Fig. 1). DC tests enlighten higher saturation current and also sub-threshold leakage currents in SH devices as compared to DH. Moreover, the presence of kink effect, quite pronounced on uncapped wafers, suggests that the application of a GaN capping layer effectively reduces surface charge trapping phenomena. Pulsed measurements show charge release at higher voltages due to a field assisted detrapping.
20th European Heterostructure Technology meeting (HeTech 2011)
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2477892
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