This work focuses on a comparison of two GaN high-electron mobility transistors (HEMTs) epilayer structures, a single- (SH) and a double-heterostructure (DH). DC and pulsed tests reveal lower ID and Ileak in DH devices. Kink effect is also reported; none shows relevant current collapse. DH HEMTs show a much higher breakdown voltage (VBR) and slope. Off-state step-stresses confirm good reliability for these devices thanks to improved back-barrier confinement; SH suffers from punch-through resulting in premature breakdown.

Characterization Of Gan-Based Single- And Double-Heterostructure Devices

ZANANDREA, ALBERTO;RAMPAZZO, FABIANA;STOCCO, ANTONIO;MENEGHINI, MATTEO;ZANONI, ENRICO;MENEGHESSO, GAUDENZIO
2012

Abstract

This work focuses on a comparison of two GaN high-electron mobility transistors (HEMTs) epilayer structures, a single- (SH) and a double-heterostructure (DH). DC and pulsed tests reveal lower ID and Ileak in DH devices. Kink effect is also reported; none shows relevant current collapse. DH HEMTs show a much higher breakdown voltage (VBR) and slope. Off-state step-stresses confirm good reliability for these devices thanks to improved back-barrier confinement; SH suffers from punch-through resulting in premature breakdown.
2012
36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2521048
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