SILVESTRI, RICCARDO
 Distribuzione geografica
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Continente #
NA - Nord America 1.284
EU - Europa 72
AS - Asia 70
Continente sconosciuto - Info sul continente non disponibili 2
SA - Sud America 1
Totale 1.429
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Nazione #
US - Stati Uniti d'America 1.283
CN - Cina 68
FI - Finlandia 33
GB - Regno Unito 12
SE - Svezia 11
DE - Germania 6
IT - Italia 4
IE - Irlanda 3
UA - Ucraina 3
EU - Europa 2
BR - Brasile 1
CA - Canada 1
JP - Giappone 1
TW - Taiwan 1
Totale 1.429
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Città #
Fairfield 236
Woodbridge 209
Ann Arbor 123
Houston 119
Ashburn 111
Seattle 103
Cambridge 88
Wilmington 71
Chandler 50
Beijing 22
San Diego 22
Medford 19
Princeton 19
Helsinki 14
Nanjing 13
Des Moines 11
Jacksonville 8
Boardman 7
Roxbury 5
Guangzhou 4
London 4
Zhengzhou 4
Dublin 3
Jiaxing 3
Jinan 3
Kharkiv 3
Nanchang 3
Padova 3
Shenyang 3
Tianjin 3
Washington 3
Changsha 2
Hangzhou 2
Hebei 2
Indiana 2
New York 2
Borås 1
Falls Church 1
Kilburn 1
Las Vegas 1
Los Angeles 1
Ningbo 1
Norwalk 1
Ogden 1
Orange 1
Prescot 1
Southwark 1
São Paulo 1
Taipei 1
Taizhou 1
Tokyo 1
Toronto 1
Tower Hamlets 1
Totale 1.316
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Nome #
Highly stable low noise / high power AlN/GaN-on-silicon double heterostructure HEMTs operating at 40 GHz 112
GaN-Based Power HEMTs: Parasitic, Reliability and High Field Issues 109
First Reliability Demonstration of Sub-200-nm AlN/GaN-on-Silicon Double-Heterostructure HEMTs for Ka-Band Applications 104
Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate 91
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 88
High PAE high reliability AlN/GaN double heterostructure 86
Degradation of AlGaN/GaN high electron mobility transistors related to hot electrons 85
High voltage trapping effects in GaN-based metal-insulator-semiconductor transistors 85
Threshold Voltage Instabilities in D-Mode GaN HEMTs for Power Switching Applications 81
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 79
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure 76
Electric-field and Thermally-activated Failure Mechanisms of AlGaN/GaN High Electron Mobility Transistors 75
Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors 70
Experimental demonstration of weibull distributed failure in p-type GaN high electron mobility transistors under high forward bias stress 67
Temperature-dependent dynamic RON in GaN-based MIS-HEMTs: Role of surface traps and buffer leakage 62
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 55
High performance high reliability AlN/GaN DHFET 54
Time dependent Degradation of AlGaN/GaN HEMTs 43
Evaluation of AlN/GaN/AlGaN double heterostructure on SiC substrate for high power millimeter wave applications 19
Totale 1.441
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Categoria #
all - tutte 5.044
article - articoli 2.392
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 7.436
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019186 0 0 0 0 0 0 0 0 0 36 70 80
2019/2020401 53 12 8 61 46 29 36 42 46 29 28 11
2020/2021160 12 14 12 5 13 4 17 16 18 10 26 13
2021/2022257 8 45 32 14 17 7 17 27 16 5 26 43
2022/2023129 28 2 1 8 32 27 0 7 17 1 6 0
2023/202461 9 11 9 3 9 12 4 2 1 1 0 0
Totale 1.441