The identification of failure modes and mechanisms which may affect the reliability of GaN-based High Electron Mobility Transistors is extremely important for the application of this technology to microwave and millimeter-wave systems, and for the development of high-efficiency GaN power electronics. GaN HEMT reliability has been the subject of a large number of studies which identifie specific failure modes, not previously observed in Si and GaAs devices.

Electric-field and Thermally-activated Failure Mechanisms of AlGaN/GaN High Electron Mobility Transistors

ZANONI, ENRICO;MENEGHESSO, GAUDENZIO;MENEGHINI, MATTEO;STOCCO, ANTONIO;RAMPAZZO, FABIANA;SILVESTRI, RICCARDO;ROSSETTO, ISABELLA;RONCHI, NICOLO'
2011

Abstract

The identification of failure modes and mechanisms which may affect the reliability of GaN-based High Electron Mobility Transistors is extremely important for the application of this technology to microwave and millimeter-wave systems, and for the development of high-efficiency GaN power electronics. GaN HEMT reliability has been the subject of a large number of studies which identifie specific failure modes, not previously observed in Si and GaAs devices.
Gallium Nitride and Silicon Carbide Power Technologies - 220th ECS Meeting; Boston, MA; United States; 9 October 2011 through 14 October 2011; Code 88574
9781566779081
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2478094
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