NAPOLITANI, ENRICO
 Distribuzione geografica
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Continente #
NA - Nord America 559
EU - Europa 266
AS - Asia 124
AF - Africa 6
SA - Sud America 5
Totale 960
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Nazione #
US - Stati Uniti d'America 557
IT - Italia 117
CN - Cina 63
FR - Francia 55
DE - Germania 19
FI - Finlandia 18
PL - Polonia 16
JP - Giappone 12
IN - India 11
KR - Corea 10
TW - Taiwan 10
GB - Regno Unito 8
HK - Hong Kong 8
IE - Irlanda 7
NL - Olanda 7
ES - Italia 6
BR - Brasile 5
AE - Emirati Arabi Uniti 4
BE - Belgio 3
ZA - Sudafrica 3
CA - Canada 2
LT - Lituania 2
RU - Federazione Russa 2
SG - Singapore 2
UA - Ucraina 2
AT - Austria 1
GR - Grecia 1
IR - Iran 1
MA - Marocco 1
MY - Malesia 1
NG - Nigeria 1
RO - Romania 1
SE - Svezia 1
TH - Thailandia 1
TN - Tunisia 1
TR - Turchia 1
Totale 960
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Città #
Fairfield 60
Houston 44
Padova 38
Buffalo 34
Woodbridge 34
Seattle 33
Ashburn 32
Santa Cruz 30
Ann Arbor 28
Cambridge 28
Beijing 25
Wilmington 19
Paris 14
Ravenna 11
Des Moines 10
Milan 10
Columbus 9
Helsinki 9
Lappeenranta 9
Hangzhou 7
Las Vegas 7
Shanghai 7
Chicago 6
New York 6
San Diego 6
Bengaluru 5
Brendola 5
College Station 5
Occhiobello 5
Phoenix 5
Taipei 5
Agordo 4
Boardman 4
Clearwater 4
Crugers 4
Grenoble 4
Meieki 4
Nuremberg 4
Riva 4
San Jose 4
Cassino 3
Central 3
Council Bluffs 3
Desenzano del Garda 3
Genoa 3
Hsinchu 3
Hyderabad 3
Lake Forest 3
Los Angeles 3
Lucan 3
Madrid 3
Passau 3
São Paulo 3
Tokyo 3
University Park 3
Albignasego 2
Araraquara 2
Atlanta 2
Barcelona 2
Bozeman 2
Costa Mesa 2
Dublin 2
Dún Laoghaire 2
Fuzhou 2
Hong Kong 2
Ilmenau 2
Kolkata 2
Kowloon 2
Leuven 2
London 2
Miami 2
Muizenberg 2
Piacenza 2
Providence 2
Provo 2
Rome 2
Rotterdam 2
Salt Lake City 2
San Francisco 2
Santa Maria Imbaro 2
Scranton 2
Seongbuk-gu 2
Toronto 2
Trieste 2
Vicenza 2
Warsaw 2
Wuhan 2
Zhengzhou 2
Amsterdam 1
Ankara 1
Anyang-si 1
Arce 1
Athens 1
Austin 1
Bangalore 1
Bangkok 1
Bergen 1
Berkeley 1
Bologna 1
Bossico 1
Totale 705
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Nome #
Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing, file e14fb26a-c78d-3de1-e053-1705fe0ac030 284
Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium, file e14fb26a-cb9b-3de1-e053-1705fe0ac030 151
C ion-implanted TiO2 thin film for photocatalytic applications, file e14fb268-2ec9-3de1-e053-1705fe0ac030 117
Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium, file e14fb26b-4b13-3de1-e053-1705fe0ac030 117
Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics, file e14fb26f-1691-3de1-e053-1705fe0ac030 40
Segmented hyperpure germanium detector, file e14fb26f-057e-3de1-e053-1705fe0ac030 34
Atomistic Mechanism of Boron Diffusion in Silicon, file e14fb267-89af-3de1-e053-1705fe0ac030 31
Mechanism of boron diffusion in amorphous silicon, file e14fb267-8450-3de1-e053-1705fe0ac030 26
Laser induced crystallization of sputtered MoS2 thin films, file 89d700de-b69c-402c-978a-65fd12a8aadf 23
Synthesis of Large-Area Crystalline MoS2 by Sputter Deposition and Pulsed Laser Annealing, file 9ebab5a8-3088-46f5-9d5c-f4158e03208d 23
Ex-situ n-type heavy doping of Ge1-xSnx epilayers by surface Sb deposition and pulsed laser melting, file 12d441c7-dd30-4c69-8aa4-2bc73a2826a4 22
Room temperature migration of boron in crystalline silicon, file e14fb267-84a7-3de1-e053-1705fe0ac030 20
Mechanisms of boron diffusion in silicon and germanium, file e14fb267-a31a-3de1-e053-1705fe0ac030 18
Laser induced crystallization of sputtered MoS2 thin films, file c10a3610-5cbb-4d91-b70b-efa5ce6ca19f 16
New method for the production of thin and stable, segmented n + contacts in HPGe detectors, file 16f8c1e0-f09b-4d50-bb40-448004aaf12f 14
Extended Point Defects in Crystalline Materials: Ge and Si, file e14fb267-a869-3de1-e053-1705fe0ac030 8
Laser crystallization of amorphous TiO2 on polymer, file b4fe46f0-0746-48c8-b2d5-ebe309a9acb1 6
Chalcogen-hyperdoped germanium for short-wavelength infrared photodetection, file e14fb26d-46c3-3de1-e053-1705fe0ac030 6
Non-Conventional Characterization of Electrically Active Dopant Profiles in Al-Implanted Ge by Depth-Resolved Micro-Raman Spectroscopy, file e14fb267-a507-3de1-e053-1705fe0ac030 5
Study of carrier concentration profiles in Al-implanted Ge by micro-Raman spectroscopy under different excitation wavelengths, file e14fb267-9c78-3de1-e053-1705fe0ac030 4
N-type heavy doping with ultralow resistivity in Ge by Sb deposition and pulsed laser melting, file e14fb26c-5325-3de1-e053-1705fe0ac030 4
High level active n(+) doping of strained germanium through co-implantation and nanosecond pulsed laser melting, file e14fb26b-4b14-3de1-e053-1705fe0ac030 3
Indiffusion of oxygen in germanium induced by pulsed laser melting, file e14fb26b-7119-3de1-e053-1705fe0ac030 3
Ex-situ doping of epitaxially grown Ge on Si by ion-implantation and pulsed laser melting, file e14fb26c-5b00-3de1-e053-1705fe0ac030 3
A critical evaluation of Ag- A nd Ti-hyperdoped Si for Si-based infrared light detection, file e14fb26f-2555-3de1-e053-1705fe0ac030 3
Native extended defects in Zn1-yGdySe/InxGa1-xAs heterostructures, file e14fb267-93ea-3de1-e053-1705fe0ac030 2
Thermodynamic stability of high phosphorus concentration in silicon nanostructures, file e14fb267-ea54-3de1-e053-1705fe0ac030 2
Ion Implantation Defects and Shallow Junctions in Si and Ge, file e14fb268-2f43-3de1-e053-1705fe0ac030 2
p-type doping of Ge by Al ion implantation and pulsed laser melting, file e14fb26d-2056-3de1-e053-1705fe0ac030 2
Cell formation in stanogermanides using pulsed laser thermal anneal on Ge0.91Sn0.09, file e14fb26d-35f2-3de1-e053-1705fe0ac030 2
N-type doping of Ge by P spin on dopant and pulsed laser melting, file e14fb26d-46c1-3de1-e053-1705fe0ac030 2
Synthesis of Large-Area Crystalline MoS2 by Sputter Deposition and Pulsed Laser Annealing, file 07073794-5f15-4f89-b154-4fc507f636d8 1
Synthesis of relaxed Ge0.9Sn0.1/Ge by nanosecond pulsed laser melting, file 0f743406-d4bc-408d-9350-72c7eff224ba 1
Low-temperature atomic layer deposition of TiO2 activated by laser annealing: Applications in photocatalysis, file 64e2027e-29eb-44ca-8bf0-626588c937fa 1
Lattice parameter of Si1-x-yGexCy alloys, file e14fb267-67c4-3de1-e053-1705fe0ac030 1
Synthesis and characterization of P delta-layer in SiO2 by monolayer doping, file e14fb26a-d3cf-3de1-e053-1705fe0ac030 1
Pulsed laser diffusion of thin hole-barrier contacts in high purity germanium for gamma radiation detectors, file e14fb26b-7671-3de1-e053-1705fe0ac030 1
Totale 999
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Categoria #
all - tutte 3.876
article - articoli 3.874
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 2
Totale 7.752
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201938 0 0 0 0 0 0 0 0 0 0 20 18
2019/2020155 14 10 6 19 19 8 13 17 19 11 10 9
2020/2021111 5 18 4 4 5 4 3 14 6 24 19 5
2021/2022214 9 14 19 32 33 8 18 11 6 4 47 13
2022/2023174 13 10 39 22 9 23 12 17 6 5 8 10
2023/2024267 5 33 10 13 8 28 18 39 52 29 32 0
Totale 999