BONALDO, STEFANO

BONALDO, STEFANO  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Charge buildup and spatial distribution of interface traps in 65-nm pMOSFETs irradiated to ultrahigh doses 2019 Stefano BonaldoSimone GerardinAlessandro Paccagnella + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
DC response, low-frequency noise, and TID-induced mechanisms in 16-nm FinFETs for high-energy physics experiments 2022 Bonaldo S.Ma T.Mattiazzo S.Paccagnella A.Gerardin S. + NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT - -
Dose-rate sensitivity of 65-nm MOSFETs Exposed to ultrahigh doses 2018 Gerardin, SimonePaccagnella, AlessandroBONALDO, STEFANO + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Gate Bias and Length Dependences of Total-Ionizing-Dose Effects in InGaAs FinFETs on Bulk Si 2019 Stefano BonaldoSimone GerardinAlessandro Paccagnella + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETs 2022 Ma, TBonaldo, SMattiazzo, SPaccagnella, AGerardin, S + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Influence of Fin- and Finger-Number on TID Degradation of 16 nm Bulk FinFETs Irradiated to Ultra-High Doses 2022 Ma T.Bonaldo S.Mattiazzo S.Paccagnella A.Gerardin S. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Influence of Halo Implantations on the Total Ionizing Dose Response of 28-nm pMOSFETs Irradiated to Ultrahigh Doses 2019 Bonaldo, StefanoMattiazzo, SerenaPaccagnella, AlessandroGerardin, Simone + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses 2018 Gerardin, SimonePaccagnella, AlessandroBONALDO, STEFANO + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Ionizing-Radiation Response and Low-Frequency Noise of 28-nm MOSFETs at Ultrahigh Doses 2020 Bonaldo S.Mattiazzo S.Paccagnella A.Gerardin S. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Low-frequency Noise and Defects in Copper and Ruthenium Resistors 2019 S. Bonaldo + APPLIED PHYSICS LETTERS - -
A plug, print & play inkjet printing and impedance-based biosensing technology operating through a smartphone for clinical diagnostics 2022 Bonaldo S.Paccagnella A. + BIOSENSORS & BIOELECTRONICS - -
RadFET dose response in the CHARM mixed-field: FLUKA MC simulations 2017 Stefano Bonaldo + EPJ NUCLEAR SCIENCES & TECHNOLOGIES - -
Single Event Effect cross section calibration and application to quasi-monoenergetic and spallation facilities 2018 Bonaldo, Stefano + EPJ NUCLEAR SCIENCES & TECHNOLOGIES - -
Test results and prospects for RD53A, a large scale 65 nm CMOS chip for pixel readout at the HL-LHC 2019 M. BagatinD. BiselloS. GerardinS. MattiazzoA. PaccagnellaD. VogrigS. Bonaldo + NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT - -
TID Degradation Mechanisms in 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses 2021 Ma T.Bonaldo S.Mattiazzo S.Paccagnella A.Gerardin S. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultra-High Doses 2022 Bonaldo S.Ma T.Mattiazzo S.Bagatin M.Paccagnella A.Gerardin S. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs with HfO2/Al2O3 Dielectrics 2020 Bonaldo S.Gerardin S.Paccagnella A. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Total-Ionizing-Dose Effects in InGaAs MOSFETs with High-k Gate Dielectrics and InP Substrates 2020 Bonaldo S.Gerardin S.Paccagnella A. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Total-Ionizing-Dose Effects on InGaAs FinFETs with Modified Gate-stack 2020 Paccagnella A.Bonaldo S.Gerardin S. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors 2021 Bonaldo S. + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -