In this paper we report on the characterization and reliability analysis of AlGaN/GaN HEMT processed on composite SiCopSiC and SopSiC substrates. Hybrid substrates are studied in order to provide a valid low-cost substrate for GaN-based devices in respect to the traditional sapphire, silicon-carbide and silicon substrates.

An investigation of reliability on hybrid substrates GaN-HEMTs

ZANON, FRANCO;RONCHI, NICOLO';DANESIN, FRANCESCA;STOCCO, ANTONIO;MENEGHESSO, GAUDENZIO
2008

Abstract

In this paper we report on the characterization and reliability analysis of AlGaN/GaN HEMT processed on composite SiCopSiC and SopSiC substrates. Hybrid substrates are studied in order to provide a valid low-cost substrate for GaN-based devices in respect to the traditional sapphire, silicon-carbide and silicon substrates.
2008
9788861292963
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2273237
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