In this paper we report on the characterization and reliability analysis of AlGaN/GaN HEMT processed on composite SiCopSiC and SopSiC substrates. Hybrid substrates are studied in order to provide a valid low-cost substrate for GaN-based devices in respect to the traditional sapphire, silicon-carbide and silicon substrates.
An investigation of reliability on hybrid substrates GaN-HEMTs
ZANON, FRANCO;RONCHI, NICOLO';DANESIN, FRANCESCA;STOCCO, ANTONIO;MENEGHESSO, GAUDENZIO
2008
Abstract
In this paper we report on the characterization and reliability analysis of AlGaN/GaN HEMT processed on composite SiCopSiC and SopSiC substrates. Hybrid substrates are studied in order to provide a valid low-cost substrate for GaN-based devices in respect to the traditional sapphire, silicon-carbide and silicon substrates.
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