In this paper we report on the characterization and reliability analysis of AlGaN/GaN HEMT processed on composite SiCopSiC and SopSiC substrates. Hybrid substrates are studied in order to provide a valid low-cost substrate for GaN-based devices in respect to the traditional sapphire, silicon-carbide and silicon substrates.

An investigation of reliability on hybrid substrates GaN-HEMTs

ZANON, FRANCO;RONCHI, NICOLO';DANESIN, FRANCESCA;STOCCO, ANTONIO;MENEGHESSO, GAUDENZIO
2008

Abstract

In this paper we report on the characterization and reliability analysis of AlGaN/GaN HEMT processed on composite SiCopSiC and SopSiC substrates. Hybrid substrates are studied in order to provide a valid low-cost substrate for GaN-based devices in respect to the traditional sapphire, silicon-carbide and silicon substrates.
2008
17th European Heterostructure Technology Workshop, HETECH 2008
9788861292963
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2273237
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
  • OpenAlex ND
social impact