In this paper we will present an experimental characterization of AlGaN/GaN HEMTs grown on SopSiC composite substrates. Tested devices yielded breakdown voltages up to 90 V (on-state) and 300 V (off-state), power densities up to 4 W/mm and power added efficiencies up to 54%. These results clearly suggest that the adopted composite substrate represent a very promising solution for the fabrication of low-cost high-power microwave transistors for wireless communication systems.
High power performances of GaN HEMT on SopSiC substrate
ZANON, FRANCO;DANESIN, FRANCESCA;TAZZOLI, AUGUSTO;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2008
Abstract
In this paper we will present an experimental characterization of AlGaN/GaN HEMTs grown on SopSiC composite substrates. Tested devices yielded breakdown voltages up to 90 V (on-state) and 300 V (off-state), power densities up to 4 W/mm and power added efficiencies up to 54%. These results clearly suggest that the adopted composite substrate represent a very promising solution for the fabrication of low-cost high-power microwave transistors for wireless communication systems.File in questo prodotto:
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