The purpose of this work is an in depth reliability analysis of Blu-Ray InGaN laser diodes (LD) submitted to CW stress at different currents and temperatures. During reliability tests, LD devices exhibit a gradual threshold current increase, while slope efficiency is almost not affected by the ageing treatment. Furthermore we demonstrate that: (i) the degradation rate shows a linear correlation with stress current level; (ii) the Ith increase is correlated to the decrease in non-radiative lifetime (snr); (iii) stress temperature acts as an accelerating factor for LD degradation; (iv) pure thermal storage does not significantly degrade LDs characteristics.

Reliability analysis of InGaN Blu-Ray laser diode

TRIVELLIN, NICOLA;MENEGHINI, MATTEO;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO;
2009

Abstract

The purpose of this work is an in depth reliability analysis of Blu-Ray InGaN laser diodes (LD) submitted to CW stress at different currents and temperatures. During reliability tests, LD devices exhibit a gradual threshold current increase, while slope efficiency is almost not affected by the ageing treatment. Furthermore we demonstrate that: (i) the degradation rate shows a linear correlation with stress current level; (ii) the Ith increase is correlated to the decrease in non-radiative lifetime (snr); (iii) stress temperature acts as an accelerating factor for LD degradation; (iv) pure thermal storage does not significantly degrade LDs characteristics.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2437824
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