In this paper we report on the characterization of AlGaN/GaN HEMT with recessed gate processed on silicon substrate. Trapping effects on samples with same gate foot width (75 nm) and different recess width (50, 80, 200 nm) are studied by means of dynamic IV and electroluminescence measurements.

A study of trapping phenomena on Recessed-Gate AlGaN/GaN-on- Silicon HEMT

RONCHI, NICOLO';MENEGHINI, MATTEO;STOCCO, ANTONIO;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO;
2010

Abstract

In this paper we report on the characterization of AlGaN/GaN HEMT with recessed gate processed on silicon substrate. Trapping effects on samples with same gate foot width (75 nm) and different recess width (50, 80, 200 nm) are studied by means of dynamic IV and electroluminescence measurements.
Book of abstract of Hetech 2010
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2437917
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