This paper analyzes the thermally-activated failure mechanisms of GaN LEDs under thermal overstress related with the presence of a PECVD SiN passivation layer. It is shown that the properties of the passivation layer can remarkably affect devices reliability during high-temperature stress: degradation mechanisms identified consist in emission crowding and series resistance increase, attributed to the thermally-activated indiffusion of hydrogen from the passivation to the p-layer, and subsequent p-doping compensation

Failure mechanisms of gallium nitride LEDs related with passivation

MENEGHINI, MATTEO;TREVISANELLO, LORENZO ROBERTO;LEVADA, SIMONE;MENEGHESSO, GAUDENZIO;TAMIAZZO, GIANLUCA;ZANONI, ENRICO;
2005

Abstract

This paper analyzes the thermally-activated failure mechanisms of GaN LEDs under thermal overstress related with the presence of a PECVD SiN passivation layer. It is shown that the properties of the passivation layer can remarkably affect devices reliability during high-temperature stress: degradation mechanisms identified consist in emission crowding and series resistance increase, attributed to the thermally-activated indiffusion of hydrogen from the passivation to the p-layer, and subsequent p-doping compensation
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2441562
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