A long-term 3000-hour test under on-state conditions (VDS =25V, 6W/mm constant dissipated power) and off-state conditions (V DS=46V, VGS=-6V) on GaN/AlGaN/GaN HEMTs is presented. Trapping presence and hot-electrons effect are characterized by means of low-frequency techniques (low-frequency noise measurements, transconductance frequency dispersion, gate-lag). The on-state stress shows the most important degradation. Since our measurements point out to the creation of traps in the gate-to-drain surface region during the stress, this degradation is ascribed to the effect of hot-electrons

Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot electron stress

SOZZA, ALBERTO;RAMPAZZO, FABIANA;TAZZOLI, AUGUSTO;DANESIN, FRANCESCA;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO;
2005

Abstract

A long-term 3000-hour test under on-state conditions (VDS =25V, 6W/mm constant dissipated power) and off-state conditions (V DS=46V, VGS=-6V) on GaN/AlGaN/GaN HEMTs is presented. Trapping presence and hot-electrons effect are characterized by means of low-frequency techniques (low-frequency noise measurements, transconductance frequency dispersion, gate-lag). The on-state stress shows the most important degradation. Since our measurements point out to the creation of traps in the gate-to-drain surface region during the stress, this degradation is ascribed to the effect of hot-electrons
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/2441839
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