In this work we study the charge trapping/detrapping kinetics on pentacene-based organic thin-film-transistors featuring SiO2 and SiO2/parylene C stack gate insulator. The threshold voltage variation is correlated with the gate pulse width and amplitude. The detrapping kinetics is thermally-activated and it is accelerated if the device is illuminated. The parylene layer strongly reduces the charge trapping/ detrapping, and it increases the hole mobility and the drain current.
Charge Trapping in Organic Thin Film Transistors
WRACHIEN, NICOLA;CESTER, ANDREA;PINATO, ALESSANDRO;MENEGHINI, MATTEO;TAZZOLI, AUGUSTO;MENEGHESSO, GAUDENZIO;
2008
Abstract
In this work we study the charge trapping/detrapping kinetics on pentacene-based organic thin-film-transistors featuring SiO2 and SiO2/parylene C stack gate insulator. The threshold voltage variation is correlated with the gate pulse width and amplitude. The detrapping kinetics is thermally-activated and it is accelerated if the device is illuminated. The parylene layer strongly reduces the charge trapping/ detrapping, and it increases the hole mobility and the drain current.
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