In this work we study the charge trapping/detrapping kinetics on pentacene-based organic thin-film-transistors featuring SiO2 and SiO2/parylene C stack gate insulator. The threshold voltage variation is correlated with the gate pulse width and amplitude. The detrapping kinetics is thermally-activated and it is accelerated if the device is illuminated. The parylene layer strongly reduces the charge trapping/ detrapping, and it increases the hole mobility and the drain current.

Charge Trapping in Organic Thin Film Transistors

WRACHIEN, NICOLA;CESTER, ANDREA;PINATO, ALESSANDRO;MENEGHINI, MATTEO;TAZZOLI, AUGUSTO;MENEGHESSO, GAUDENZIO;
2008

Abstract

In this work we study the charge trapping/detrapping kinetics on pentacene-based organic thin-film-transistors featuring SiO2 and SiO2/parylene C stack gate insulator. The threshold voltage variation is correlated with the gate pulse width and amplitude. The detrapping kinetics is thermally-activated and it is accelerated if the device is illuminated. The parylene layer strongly reduces the charge trapping/ detrapping, and it increases the hole mobility and the drain current.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Caricamento pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2443915
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact