We investigate the role of the 0.5 eV traps in determining GaN HEMT degradation by means of DC and rf testing, and 2D numerical simulation. We demonstrate that generation of deep levels, having an activation energy of 0.5 eV, is responsible for the degradation observed during rf aging; we show that the occurrence of trap-induced degradation depends on rf driving conditions. We also show that degradation can be explained by the generation of a damaged region within the AlGaN layer at the gate-drain edge, and that the DC and pulsed device degradation effects have a different dependence on the width and depth of the damaged region.

Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs

STOCCO, ANTONIO;RONCHI, NICOLO';ZANON, FRANCO;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2009

Abstract

We investigate the role of the 0.5 eV traps in determining GaN HEMT degradation by means of DC and rf testing, and 2D numerical simulation. We demonstrate that generation of deep levels, having an activation energy of 0.5 eV, is responsible for the degradation observed during rf aging; we show that the occurrence of trap-induced degradation depends on rf driving conditions. We also show that degradation can be explained by the generation of a damaged region within the AlGaN layer at the gate-drain edge, and that the DC and pulsed device degradation effects have a different dependence on the width and depth of the damaged region.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2445791
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