This work presents the results of an extensive DC current aging and failure analysis carried out on blue InGaN/GaN LEDs which identify failure mechanisms related to package degradation, changes in effective doping profile, and generation of deep levels. DLTS and photocurrent spectra indicate the creation of extended defects in devices aged at very high current density.

Degradation mechanisms of GaN-based LEDs after accelerated DC current aging

MENEGHESSO, GAUDENZIO;LEVADA, SIMONE;PIEROBON, ROBERTO;RAMPAZZO, FABIANA;ZANONI, ENRICO;
2002

Abstract

This work presents the results of an extensive DC current aging and failure analysis carried out on blue InGaN/GaN LEDs which identify failure mechanisms related to package degradation, changes in effective doping profile, and generation of deep levels. DLTS and photocurrent spectra indicate the creation of extended defects in devices aged at very high current density.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2454393
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 55
  • ???jsp.display-item.citation.isi??? 43
social impact