Padua Research Archive, l’archivio istituzionale della produzione scientifica dell’Università degli Studi di Padova, ha lo scopo di raccogliere, documentare, conservare e pubblicare, anche ad accesso aperto, i prodotti della ricerca dell’Ateneo. Padua Research Archive utilizza la piattaforma IRIS (Institutional Research Information System) sviluppata da Cineca.
EnglishA sthdy of InP based HEMTs implemented with different process options will be reported. It will be demonstrated that devices with an InP etch stopper layer or with a narrow lateral gate recess region do not present any kink effect, neither any transconductance frequency dispersion, gin(f) and a stable behavior with respect to hot electron aging is observed. The opposite occurs in devices without.the InP etch stopper layer and a wide lateral gate recess region. The data presented confirm the effectiveness of an InP passivating layer in improving the reliability of advanced InP-HEMTs, and point out at the free InA1As surface as responsible for the observed instabilities (kink effects, gm(f) dispersion)
| Titolo: | Parasitic effects and long term stability of InP-based HEMTs |
| Autori: | |
| Data di pubblicazione: | 2000 |
| Rivista: | |
| Abstract: | A sthdy of InP based HEMTs implemented with different process options will be reported. It will be demonstrated that devices with an InP etch stopper layer or with a narrow lateral gate recess region do not present any kink effect, neither any transconductance frequency dispersion, gin(f) and a stable behavior with respect to hot electron aging is observed. The opposite occurs in devices without.the InP etch stopper layer and a wide lateral gate recess region. The data presented confirm the effectiveness of an InP passivating layer in improving the reliability of advanced InP-HEMTs, and point out at the free InA1As surface as responsible for the observed instabilities (kink effects, gm(f) dispersion) |
| Handle: | http://hdl.handle.net/11577/2470829 |
| Appare nelle tipologie: | 01.01 - Articolo in rivista |
File in questo prodotto:
Copyright © 2019