Parasitic effects and long term stability of InP-based HEMTs

Meneghesso, Gaudenzio; Luise, R.; Buttari, Dario; Chini, Alessandro; Yokoyama, H.; Suemitsu, T.; Zanoni, Enrico

doi:10.1016/S0026-2714(00)00168-2

A sthdy of InP based HEMTs implemented with different process options will be reported. It will be demonstrated that devices with an InP etch stopper layer or with a narrow lateral gate recess region do not present any kink effect, neither any transconductance frequency dispersion, gin(f) and a stable behavior with respect to hot electron aging is observed. The opposite occurs in devices without.the InP etch stopper layer and a wide lateral gate recess region. The data presented confirm the effectiveness of an InP passivating layer in improving the reliability of advanced InP-HEMTs, and point out at the free InA1As surface as responsible for the observed instabilities (kink effects, gm(f) dispersion)

Titolo:	Parasitic effects and long term stability of InP-based HEMTs
Autori:	MENEGHESSO, GAUDENZIO R. LUISE BUTTARI, DARIO CHINI, ALESSANDRO H. YOKOYAMA T. SUEMITSU ZANONI, ENRICO mostra contributor esterni nascondi contributor esterni
Data di pubblicazione:	2000
Rivista:	MICROELECTRONICS RELIABILITY
Abstract:	A sthdy of InP based HEMTs implemented with different process options will be reported. It will be demonstrated that devices with an InP etch stopper layer or with a narrow lateral gate recess region do not present any kink effect, neither any transconductance frequency dispersion, gin(f) and a stable behavior with respect to hot electron aging is observed. The opposite occurs in devices without.the InP etch stopper layer and a wide lateral gate recess region. The data presented confirm the effectiveness of an InP passivating layer in improving the reliability of advanced InP-HEMTs, and point out at the free InA1As surface as responsible for the observed instabilities (kink effects, gm(f) dispersion)
Handle:	http://hdl.handle.net/11577/2470829
Appare nelle tipologie:	01.01 - Articolo in rivista

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