We report on the electrical performances of high current density AlGaN/GaN HEMTs. 2x75μmx0:7μm devices grown on sapphire substrate showed current densities up to 2.1A/mm under 200ns pulse condition. RF power measurements at 8GHz and VDS = 15V exhibited a saturated output power of 3.66W/mm with a 47.8% peak PAE

2.1 A/mm current density AlGaN/GaN HEMT

CHINI, ALESSANDRO;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO;BUTTARI, DARIO;
2003

Abstract

We report on the electrical performances of high current density AlGaN/GaN HEMTs. 2x75μmx0:7μm devices grown on sapphire substrate showed current densities up to 2.1A/mm under 200ns pulse condition. RF power measurements at 8GHz and VDS = 15V exhibited a saturated output power of 3.66W/mm with a 47.8% peak PAE
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2473190
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