Within this paper we analyze the physical mechanisms causing the degradation of InGaN-based Blu-ray laser diodes and LED structures (with the same epitaxial structure of laser diodes), submitted to stress at 70 °C, 4 kA/cm2. Data were collected by means of electro-optical measurements, electroluminescence characterization, and near field emission measurements, and provide experimental evidence for the following: (i) stress induces an increase in threshold current, according to the square root of stress time, and a decrease in sub-threshold emission; (ii) stress induces a slight variation in the slope efficiency of the LDs; (iii) during stress the output power of LED samples showed a significant decrease, and (iv) the characteristic yellow luminescence signal decreased with a weaker dependence on stress time with respect to the main violet peak.
Electro-Optical analysis of the degradation of advanced InGaN-laser structures
DE SANTI, CARLO;MENEGHINI, MATTEO;TRIVELLIN, NICOLA;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2011
Abstract
Within this paper we analyze the physical mechanisms causing the degradation of InGaN-based Blu-ray laser diodes and LED structures (with the same epitaxial structure of laser diodes), submitted to stress at 70 °C, 4 kA/cm2. Data were collected by means of electro-optical measurements, electroluminescence characterization, and near field emission measurements, and provide experimental evidence for the following: (i) stress induces an increase in threshold current, according to the square root of stress time, and a decrease in sub-threshold emission; (ii) stress induces a slight variation in the slope efficiency of the LDs; (iii) during stress the output power of LED samples showed a significant decrease, and (iv) the characteristic yellow luminescence signal decreased with a weaker dependence on stress time with respect to the main violet peak.Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
