The EOS/ESD sensitivity of the main circuit blocks of a complete GaAs multi-stage power amplifier for microwave applications was investigated under HBM, MM and TLP regimes. Hard breakdown failure modes were identified due to passive components failure. The high current injection state of active components was also analyzed

ESD sensitivity of a GaAs MMIC microwave power amplifier

TAZZOLI, AUGUSTO;ROSSETTO, ISABELLA;ZANONI, ENRICO;MENEGHESSO, GAUDENZIO
2011

Abstract

The EOS/ESD sensitivity of the main circuit blocks of a complete GaAs multi-stage power amplifier for microwave applications was investigated under HBM, MM and TLP regimes. Hard breakdown failure modes were identified due to passive components failure. The high current injection state of active components was also analyzed
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/2477945
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