ROSSETTO, ISABELLA

ROSSETTO, ISABELLA  

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Risultati 1 - 20 di 63 (tempo di esecuzione: 0.032 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
2DEG Retraction and Potential Distribution of GaN-on-Si HEMTs Investigated Through a Floating Gate Terminal 2018 Rossetto, I.Meneghini, M.De Santi, C.PANDEY, SUDIPMeneghesso, G.Zanoni, E. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
A novel high voltage and high speed measurement system for dynamic RON measurements in GaN‐based high mobility transistors (HEMTs) 2016 BARBATO, ALESSANDROROSSETTO, ISABELLABARBATO, MARCOMENEGHINI, MATTEOZANONI, ENRICOMENEGHESSO, GAUDENZIO - - Proc. of 40th WOCSDICE ‐ Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe
Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements 2014 MENEGHINI, MATTEOROSSETTO, ISABELLABISI, DAVIDESTOCCO, ANTONIOMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Buffer-induced vertical leakage and charge trapping in normally-off GaN-on-Si HEMTs 2017 M. BorgaM. MeneghiniI. RossettoM. SilvestriG. MeneghessoE. Zanoni + - - Proceedings of the 41th WOCSDICE - Workshop on Compound Semiconductor Devices and Integrated Circuits 2017
Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate 2013 ROSSETTO, ISABELLARAMPAZZO, FABIANASILVESTRI, RICCARDOZANANDREA, ALBERTOMENEGHINI, MATTEOZANONI, ENRICOMENEGHESSO, GAUDENZIO + MICROELECTRONICS RELIABILITY - -
Coupled experimental/simulation analysis as a tool for probing trap-related and high-electric-field phenomena in GaN HEMTs 2017 C. De SantiG. MeneghessoM. MeneghiniI. RossettoE. Zanoni + - - Proceedings of the 2017 International Integrated Reliability Workshop (IIRW 2017)
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress 2013 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOSTOCCO, ANTONIOBISI, DAVIDEDE SANTI, CARLOROSSETTO, ISABELLAZANANDREA, ALBERTORAMPAZZO, FABIANAZANONI, ENRICO MICROELECTRONIC ENGINEERING - -
Degradation of AlGaN/GaN HET devices: role of reverse vias and hot electron stress 2013 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOSTOCCO, ANTONIOBISI, DAVIDEDE SANTI, CARLOROSSETTO, ISABELLAZANANDREA, ALBERTOCESTER, ANDREARAMPAZZO, FABIANAZANONI, ENRICO - - 18th Conference of "Insulating Films on Semiconductors" (INFOS2013)
Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences 2014 ROSSETTO, ISABELLARAMPAZZO, FABIANAGERARDIN, SIMONEMENEGHINI, MATTEOBAGATIN, MARTAZANANDREA, ALBERTOPACCAGNELLA, ALESSANDROMENEGHESSO, GAUDENZIOZANONI, ENRICO + PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE - 2014 44th European Solid State Device Research Conference (ESSDERC)
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry 2017 Meneghini, MatteoRossetto, IsabellaBorga, MatteoCanato, EleonoraDe Santi, CarloRampazzo, FabianaMeneghesso, GaudenzioZanoni, EnricoStoffels, Steve + IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - IEEE International Reliability Physics Symposium Proceedings
Demonstration of Field- and Power-Dependent ESD Failure in AlGaN/GaN RF HEMTs 2015 ROSSETTO, ISABELLAMENEGHINI, MATTEOBARBATO, MARCORAMPAZZO, FABIANAMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Dielectric related issues in GaN based MIS HEMTs 2017 G. MeneghessoD. BisiI RossettoM. RuzzarinC. De SantiMENEGHINI, MATTEOE. Zanoni - - Proceedings of the 44th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-44)
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs 2015 Bisi, DStocco, A.Rossetto, I.Meneghini, M.Rampazzo, Fabiana.Chini, A.De Salvador, D.Bazzan, M.Meneghesso, G.Zanoni, E. + MICROELECTRONICS RELIABILITY - -
Electric-field and Thermally-activated Failure Mechanisms of AlGaN/GaN High Electron Mobility Transistors 2011 ZANONI, ENRICOMENEGHESSO, GAUDENZIOMENEGHINI, MATTEOSTOCCO, ANTONIORAMPAZZO, FABIANASILVESTRI, RICCARDOROSSETTO, ISABELLARONCHI, NICOLO' - - Gallium Nitride and Silicon Carbide Power Technologies - 220th ECS Meeting; Boston, MA; United States; 9 October 2011 through 14 October 2011; Code 88574
ESD sensitivity of a GaAs MMIC microwave power amplifier 2011 TAZZOLI, AUGUSTOROSSETTO, ISABELLAZANONI, ENRICOMENEGHESSO, GAUDENZIO + MICROELECTRONICS RELIABILITY - -
Evidence of Hot-Electron Degradation in GaN-based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress 2016 RUZZARIN, MARIAMENEGHINI, MATTEOROSSETTO, ISABELLAMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE ELECTRON DEVICE LETTERS - -
Evidence of Hot-Electron Effects during Hard Switching of AlGaN/GaN HEMTs 2017 Rossetto, I.Meneghini, M.Tajalli, A.Dalcanale, S.De Santi, C.Zanoni, E.Meneghesso, G. + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs 2017 Borga, MatteoMeneghini, MatteoRossetto, IsabellaStoffels, SteveMeneghesso, GaudenzioZanoni, Enrico + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Experimental demonstration of weibull distributed failure in p-type GaN high electron mobility transistors under high forward bias stress 2016 ROSSETTO, ISABELLAMENEGHINI, MATTEOSILVESTRI, RICCARDODALCANALE, STEFANOZANONI, ENRICOMENEGHESSO, GAUDENZIO + - - Proceedings of the 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Extensive Investigation of Time-Dependent Breakdown of GaN-HEMTs Submitted to OFF-State Stress 2015 MENEGHINI, MATTEOROSSETTO, ISABELLAMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -