ROSSETTO, ISABELLA

ROSSETTO, ISABELLA  

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Risultati 1 - 20 di 63 (tempo di esecuzione: 0.043 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Electric-field and Thermally-activated Failure Mechanisms of AlGaN/GaN High Electron Mobility Transistors 2011 ZANONI, ENRICOMENEGHESSO, GAUDENZIOMENEGHINI, MATTEOSTOCCO, ANTONIORAMPAZZO, FABIANASILVESTRI, RICCARDOROSSETTO, ISABELLARONCHI, NICOLO' - - Gallium Nitride and Silicon Carbide Power Technologies - 220th ECS Meeting; Boston, MA; United States; 9 October 2011 through 14 October 2011; Code 88574
ESD sensitivity of a GaAs MMIC microwave power amplifier 2011 TAZZOLI, AUGUSTOROSSETTO, ISABELLAZANONI, ENRICOMENEGHESSO, GAUDENZIO + MICROELECTRONICS RELIABILITY - -
Indirect techniques for channel temperature estimation of HEMT microwave transistors: Comparison and limits 2012 ROSSETTO, ISABELLAMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate 2013 ROSSETTO, ISABELLARAMPAZZO, FABIANASILVESTRI, RICCARDOZANANDREA, ALBERTOMENEGHINI, MATTEOZANONI, ENRICOMENEGHESSO, GAUDENZIO + MICROELECTRONICS RELIABILITY - -
GaN-HEMTs devices with single- and double-heterostructure for power switching applications 2013 MENEGHESSO, GAUDENZIOZANANDREA, ALBERTOSTOCCO, ANTONIOROSSETTO, ISABELLADE SANTI, CARLORAMPAZZO, FABIANAMENEGHINI, MATTEOZANONI, ENRICO + - - 2013 IEEE International Reliability Physics Symposium, IRPS 2013
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress 2013 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOSTOCCO, ANTONIOBISI, DAVIDEDE SANTI, CARLOROSSETTO, ISABELLAZANANDREA, ALBERTORAMPAZZO, FABIANAZANONI, ENRICO MICROELECTRONIC ENGINEERING - -
Trapping phenomena in AlGaN/GaN HEMTs: A study based on pulsed and transient measurements 2013 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOBISI, DAVIDEROSSETTO, ISABELLACESTER, ANDREAZANONI, ENRICO + SEMICONDUCTOR SCIENCE AND TECHNOLOGY - -
Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics 2013 ROSSETTO, ISABELLAMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO MICROELECTRONICS RELIABILITY - -
Degradation of AlGaN/GaN HET devices: role of reverse vias and hot electron stress 2013 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOSTOCCO, ANTONIOBISI, DAVIDEDE SANTI, CARLOROSSETTO, ISABELLAZANANDREA, ALBERTOCESTER, ANDREARAMPAZZO, FABIANAZANONI, ENRICO - - 18th Conference of "Insulating Films on Semiconductors" (INFOS2013)
Role of buffer doping and pre-existing trap states in the current collapse and degradation of AlGaN/GaN HEMTs 2014 MENEGHINI, MATTEOROSSETTO, ISABELLABISI, DAVIDESTOCCO, ANTONIOCESTER, ANDREAMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - 52nd IEEE International Reliability Physics Symposium
Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements 2014 MENEGHINI, MATTEOROSSETTO, ISABELLABISI, DAVIDESTOCCO, ANTONIOMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs 2014 ROSSETTO, ISABELLARAMPAZZO, FABIANAMENEGHINI, MATTEOSILVESTRI, MARCOMENEGHESSO, GAUDENZIOZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences 2014 ROSSETTO, ISABELLARAMPAZZO, FABIANAGERARDIN, SIMONEMENEGHINI, MATTEOBAGATIN, MARTAZANANDREA, ALBERTOPACCAGNELLA, ALESSANDROMENEGHESSO, GAUDENZIOZANONI, ENRICO + PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE - 2014 44th European Solid State Device Research Conference (ESSDERC)
Parasitic effects of buffer design on static and dynamic parameters of AlGaN/GaN High Electron Mobility Transistors 2014 BISI, DAVIDESTOCCO, ANTONIOROSSETTO, ISABELLAMENEGHINI, MATTEORAMPAZZO, FABIANACHINI, ALESSANDRODE SALVADOR, DAVIDEBAZZAN, MARCOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - proc. of 7th ESA-MOD Workshop on Wideband Gap semiconductors and Components
Impact of iron doping on buffer traps and current collapse in GaN-based HEMTs 2014 MENEGHINI, MATTEOROSSETTO, ISABELLABISI, DAVIDEMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - Proc. of Compound Semiconductor Week – 41st International Symposium on Compound Semiconductors (ISCS) 2014
Physical effects limiting performance and reliability of GaN High Electron Mobility Transistors 2014 ZANONI, ENRICOMENEGHESSO, GAUDENZIOMENEGHINI, MATTEOBISI, DAVIDEDE SANTI, CARLORAMPAZZO, FABIANAROSSETTO, ISABELLASTOCCO, ANTONIO + - - Proc. of 2014 International Conference on Solid State Devices and Materials SSDM-2014
From GaAs to GaN technology: study of limits and reliability of High Electron Mobility Transistors 2014 Rossetto, Isabella - - -
Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs 2015 ROSSETTO, ISABELLAMENEGHINI, MATTEOBISI, DAVIDEBARBATO, ALESSANDROMARCON, DANIELAMENEGHESSO, GAUDENZIOZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
Extensive Investigation of Time-Dependent Breakdown of GaN-HEMTs Submitted to OFF-State Stress 2015 MENEGHINI, MATTEOROSSETTO, ISABELLAMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Demonstration of Field- and Power-Dependent ESD Failure in AlGaN/GaN RF HEMTs 2015 ROSSETTO, ISABELLAMENEGHINI, MATTEOBARBATO, MARCORAMPAZZO, FABIANAMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -