Recent studies suggest that the degradation of InGaN-based laser diodes (LDs) is due to the generation of defects. However, the properties of the defect responsible for the degradation of LDs have not been described up to now. This paper demonstrates that degradation of InGaN LDs is correlated to the increase in concentration of a deep-level (DL) with activation energy equal to 0.45 eV, and cross section in the range 4·10-18-10-17 cm2, located within the quantumwell region. This result was obtained by combined optical measurements, DLTS analysis and 2D simulation.
Identification of the deep level involved in InGaN-laser degradation by means of Deep-Level Transient Spectroscopy
MENEGHINI, MATTEO;DE SANTI, CARLO;TRIVELLIN, NICOLA;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2011
Abstract
Recent studies suggest that the degradation of InGaN-based laser diodes (LDs) is due to the generation of defects. However, the properties of the defect responsible for the degradation of LDs have not been described up to now. This paper demonstrates that degradation of InGaN LDs is correlated to the increase in concentration of a deep-level (DL) with activation energy equal to 0.45 eV, and cross section in the range 4·10-18-10-17 cm2, located within the quantumwell region. This result was obtained by combined optical measurements, DLTS analysis and 2D simulation.
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