We performed channel hot carrier stress on enhancement-mode, inversion-type III-V MOSFETs with Al2O3 gate dielectric. The stress induces subthreshold swing degradation, increase on the threshold voltage and reduction of drain saturation current. Nonetheless, no mobility degradation can be appreciated at least with a stress time as long as 105 s.
Effects of Channel Hot Carrier Stress on III-V Bulk Planar MOSFETs
WRACHIEN, NICOLA;CESTER, ANDREA;BARI, DANIELE;ZANONI, ENRICO;MENEGHESSO, GAUDENZIO;
2012
Abstract
We performed channel hot carrier stress on enhancement-mode, inversion-type III-V MOSFETs with Al2O3 gate dielectric. The stress induces subthreshold swing degradation, increase on the threshold voltage and reduction of drain saturation current. Nonetheless, no mobility degradation can be appreciated at least with a stress time as long as 105 s.File in questo prodotto:
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