We performed channel hot carrier stress on enhancement-mode, inversion-type III-V MOSFETs with Al2O3 gate dielectric. The stress induces subthreshold swing degradation, increase on the threshold voltage and reduction of drain saturation current. Nonetheless, no mobility degradation can be appreciated at least with a stress time as long as 105 s.

Effects of Channel Hot Carrier Stress on III-V Bulk Planar MOSFETs

WRACHIEN, NICOLA;CESTER, ANDREA;BARI, DANIELE;ZANONI, ENRICO;MENEGHESSO, GAUDENZIO;
2012

Abstract

We performed channel hot carrier stress on enhancement-mode, inversion-type III-V MOSFETs with Al2O3 gate dielectric. The stress induces subthreshold swing degradation, increase on the threshold voltage and reduction of drain saturation current. Nonetheless, no mobility degradation can be appreciated at least with a stress time as long as 105 s.
2012
IEEE IRPS2012, International Reliability Physics Symposium
IEEE IRPS2012, International Reliability Physics Symposium
9781457716782
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2521043
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