In this paper we present the results of an extensive characterization of luminescence processes related to localized defects occurring in InGaN-based Light Emitting Diodes under low reverse and forward-current conditions. For this analysis, electrical characterization, combined with spectrally and spatially resolved electroluminescence measurements were carried out. Experimental results show that: (i) under reverse bias conditions, devices emit a localized luminescence signal; (ii) under low forward-current conditions LEDs can show spectral and spatial fluctuations in the EL signal; (iii) submicrometer-size yellow-emitting dots can also be revealed during low forward-current operation.
Extensive Study Of Luminescence Processes Related To Localized Defects In InGaN-Based Light Emitting Diodes
VACCARI, SIMONE;MENEGHINI, MATTEO;TRIVELLIN, NICOLA;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2012
Abstract
In this paper we present the results of an extensive characterization of luminescence processes related to localized defects occurring in InGaN-based Light Emitting Diodes under low reverse and forward-current conditions. For this analysis, electrical characterization, combined with spectrally and spatially resolved electroluminescence measurements were carried out. Experimental results show that: (i) under reverse bias conditions, devices emit a localized luminescence signal; (ii) under low forward-current conditions LEDs can show spectral and spatial fluctuations in the EL signal; (iii) submicrometer-size yellow-emitting dots can also be revealed during low forward-current operation.Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
