The effects of thermal storage on GaN-HEMT devices grown on SiC substrate have been investigated by DC, pulsed electrical measurements, and optical microscopy. After 2,000 hours of thermal storage testing at 300°C, only a limited reduction of the DC parameters was observed. Whereas pulsed measurements on aged devices clearly highlight a dramatic current collapse effect that has been attributed to creation of surface traps in the gate-to-drain and gate-to-source access region. A loss of adhesion of the passivation layer was responsible for the observed trap formation. An improved passivation deposition process was therefore developed to prevent passivation detaching.

Passivation degradation induced by thermal storage on AlGaN/GaN HEMTs

DANESIN, FRANCESCA;MARINO, FABIO ALESSIO;TAZZOLI, AUGUSTO;ZANON, FRANCO;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO;
2008

Abstract

The effects of thermal storage on GaN-HEMT devices grown on SiC substrate have been investigated by DC, pulsed electrical measurements, and optical microscopy. After 2,000 hours of thermal storage testing at 300°C, only a limited reduction of the DC parameters was observed. Whereas pulsed measurements on aged devices clearly highlight a dramatic current collapse effect that has been attributed to creation of surface traps in the gate-to-drain and gate-to-source access region. A loss of adhesion of the passivation layer was responsible for the observed trap formation. An improved passivation deposition process was therefore developed to prevent passivation detaching.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2273230
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