This paper reports on an extensive analysis of the electroluminescence spectra of GaN-based high-electron mobility transistors HEMT submitted to different bias regimes. The results described within this paper indicate that: i under ON-state bias conditions, HEMT can emit a weak luminescence signal, localized at the edge of the gate toward the drain side; ii for low drain voltage levels, the electroluminescence spectrum has a Maxwellian shape, which is typical for hot carrier luminescence; iii for high drain voltage levels, parasitic emission bands are generated, possibly due to the recombination of hot electrons through defect-related sites. Electroluminescence data are compared with results of cathodoluminescence measurements, to provide an interpretation for the experimental results.

Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors

MENEGHINI, MATTEO;STOCCO, ANTONIO;RONCHI, NICOLO';MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2010

Abstract

This paper reports on an extensive analysis of the electroluminescence spectra of GaN-based high-electron mobility transistors HEMT submitted to different bias regimes. The results described within this paper indicate that: i under ON-state bias conditions, HEMT can emit a weak luminescence signal, localized at the edge of the gate toward the drain side; ii for low drain voltage levels, the electroluminescence spectrum has a Maxwellian shape, which is typical for hot carrier luminescence; iii for high drain voltage levels, parasitic emission bands are generated, possibly due to the recombination of hot electrons through defect-related sites. Electroluminescence data are compared with results of cathodoluminescence measurements, to provide an interpretation for the experimental results.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2436589
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