Experimental/Numerical Investigation on Current Collapse in AlGaN/GaN HEMT's

Verzellesi, G.; Pierobon, Roberto; Rampazzo, Fabiana; Meneghesso, Gaudenzio; Chini, Alessandro; Buttari, Dario; Mishra, U. K.; Canali, C.; Zanoni, Enrico

doi:10.1109/IEDM.2002.1175932

Rf current collapse is investigated in AlGaN/GaN HEMT's by means of pulsed, transient, and small-signal measurements. Numerical device simulations are presented, showing that the concomitant presence, at the ungated device surface, of polarization-induced charges and hole traps can explain, without invoking any other hypothesis, all dispersion effects observed experimentally.

Titolo:	Experimental/Numerical Investigation on Current Collapse in AlGaN/GaN HEMT's
Autori:	G. VERZELLESI PIEROBON, ROBERTO RAMPAZZO, FABIANA MENEGHESSO, GAUDENZIO CHINI, ALESSANDRO BUTTARI, DARIO U. K. MISHRA C. CANALI ZANONI, ENRICO mostra contributor esterni nascondi contributor esterni
Data di pubblicazione:	2002
Abstract:	Rf current collapse is investigated in AlGaN/GaN HEMT's by means of pulsed, transient, and small-signal measurements. Numerical device simulations are presented, showing that the concomitant presence, at the ungated device surface, of polarization-induced charges and hole traps can explain, without invoking any other hypothesis, all dispersion effects observed experimentally.
Handle:	http://hdl.handle.net/11577/2454428
ISBN:	0780374622
Appare nelle tipologie:	04.01 - Contributo in atti di convegno

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