Rf current collapse is investigated in AlGaN/GaN HEMT's by means of pulsed, transient, and small-signal measurements. Numerical device simulations are presented, showing that the concomitant presence, at the ungated device surface, of polarization-induced charges and hole traps can explain, without invoking any other hypothesis, all dispersion effects observed experimentally.
Titolo: | Experimental/Numerical Investigation on Current Collapse in AlGaN/GaN HEMT's |
Autori: | |
Data di pubblicazione: | 2002 |
Abstract: | Rf current collapse is investigated in AlGaN/GaN HEMT's by means of pulsed, transient, and small-signal measurements. Numerical device simulations are presented, showing that the concomitant presence, at the ungated device surface, of polarization-induced charges and hole traps can explain, without invoking any other hypothesis, all dispersion effects observed experimentally. |
Handle: | http://hdl.handle.net/11577/2454428 |
ISBN: | 0780374622 |
Appare nelle tipologie: | 04.01 - Contributo in atti di convegno |
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