BISI, DAVIDE

BISI, DAVIDE  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Risultati 1 - 20 di 60 (tempo di esecuzione: 0.033 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
Effects of Thermal Annealing on Current Degradation in Enhancement Mode Pd gate InAlAs/InGaAs/InP pHEMTs 2011 BISI, DAVIDECHINI, ALESSANDRO + - - 20th European Heterostructure Technology meeting
DC and Pulsed Characterization of GaN-based Single- and Double- Heterostructure Devices 2011 ZANANDREA, ALBERTORAMPAZZO, FABIANASTOCCO, ANTONIOZANONI, ENRICOBISI, DAVIDEMENEGHESSO, GAUDENZIO + - - 20th European Heterostructure Technology meeting (HeTech 2011)
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 2011 RAMPAZZO, FABIANASTOCCO, ANTONIOSILVESTRI, RICCARDOMENEGHINI, MATTEORONCHI, NICOLO'BISI, DAVIDEMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - 20th European Heterostructure Technology meeting (HeTech 2011)
Reverse-Bias Degradation of AlGaN/GaN Vertical Schottky Diodes: An Investigation Based on Electrical and Capacitive Measurements 2012 MENEGHINI, MATTEOBERTIN, MARCOSTOCCO, ANTONIOBISI, DAVIDEMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - ISCS 2012, 39th International Symposium on Compound Semiconductors, CSW
Field plate related reliability improvements in GaN-on-Si HEMTs 2012 BISI, DAVIDEMENEGHESSO, GAUDENZIOZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -
Correlation between Drain Current Transient and Double-Pulse Measurements in AlGaN/GaN HEMT Trap Analysis 2012 BISI, DAVIDESTOCCO, ANTONIORAMPAZZO, FABIANAMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - 21th European workshop on Heterostructure Technology, HeTech 2012
Experimental and Numerical Correlation between Current-Collapse and Fe-doping Profiles in GaN HEMTs 2012 BISI, DAVIDESTOCCO, ANTONIOMENEGHINI, MATTEOGASPAROTTO, ANDREAMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - IEEE IRPS2012, International Reliability Physics Symposium
Traps characterization in AlGaN/GaN HEMTs by means of Drain Current Transient Measurements 2012 BISI, DAVIDEMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - 21th European workshop on Heterostructure Technology, HeTech 2012
Degradation of AlGaN/GaN HEMT devices: Role of reverse-bias and hot electron stress 2013 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOSTOCCO, ANTONIOBISI, DAVIDEDE SANTI, CARLOROSSETTO, ISABELLAZANANDREA, ALBERTORAMPAZZO, FABIANAZANONI, ENRICO MICROELECTRONIC ENGINEERING - -
Transient Performance, Breakdown And Degradation Of Power Transistors GaN On Si Technology 2013 MENEGHINI, MATTEOBISI, DAVIDEMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - 45th annual meeting of the Associazione Gruppo Italiano di Elettronica
Influence of Fluorine-Based Dry Etching on Electrical Parameters of AlGaN/GaN-on-Si High Electron Mobility Transistors 2013 BISI, DAVIDEMENEGHINI, MATTEOSTOCCO, ANTONIOCIBIN, GIULIAZANONI, ENRICOMENEGHESSO, GAUDENZIO + - - European Solid-State Device Research Conference
Trapping phenomena in AlGaN/GaN HEMTs: A study based on pulsed and transient measurements 2013 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOBISI, DAVIDEROSSETTO, ISABELLACESTER, ANDREAZANONI, ENRICO + SEMICONDUCTOR SCIENCE AND TECHNOLOGY - -
Deep-Levels characterization in AlGaN/GaN High Electron Mobility Transistors by means of Drain Current Transient Analysis 2013 BISI, DAVIDESTOCCO, ANTONIORAMPAZZO, FABIANAMENEGHINI, MATTEOZANONI, ENRICOMENEGHESSO, GAUDENZIO + - - 10th Topical Workshop on Heterostructure Microelectronics
Ron Collapse, Breakdown and Degradation of d-mode MIS-HEMTs Based on GaN on Si Technology 2013 MENEGHINI, MATTEOBISI, DAVIDEMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - International Conference on Nitride Semiconductors
Deep Levels Characterization by Means of Drain Current Transient in AlGaN/GaN HEMT Devices 2013 BISI, DAVIDESTOCCO, ANTONIORAMPAZZO, FABIANAMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + - - 37th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE 2013)
Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements 2013 BISI, DAVIDEMENEGHINI, MATTEODE SANTI, CARLOMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Degradation of AlGaN/GaN HET devices: role of reverse vias and hot electron stress 2013 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOSTOCCO, ANTONIOBISI, DAVIDEDE SANTI, CARLOROSSETTO, ISABELLAZANANDREA, ALBERTOCESTER, ANDREARAMPAZZO, FABIANAZANONI, ENRICO - - 18th Conference of "Insulating Films on Semiconductors" (INFOS2013)
GaN-Based Power HEMTs: Parasitic, Reliability and High Field Issues 2013 MENEGHESSO, GAUDENZIOMENEGHINI, MATTEOBISI, DAVIDESILVESTRI, RICCARDOZANANDREA, ALBERTOZANONI, ENRICO + ECS TRANSACTIONS - -
Buffer Traps in Fe-Doped AlGaN/GaN HEMTs: Investigation of the Physical Properties Based on Pulsed and Transient Measurements 2014 MENEGHINI, MATTEOROSSETTO, ISABELLABISI, DAVIDESTOCCO, ANTONIOMENEGHESSO, GAUDENZIOZANONI, ENRICO + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Proton induced trapping effect on space compatible GaN HEMTs 2014 STOCCO, ANTONIOGERARDIN, SIMONEBISI, DAVIDEDALCANALE, STEFANORAMPAZZO, FABIANAMENEGHINI, MATTEOMENEGHESSO, GAUDENZIOZANONI, ENRICO + MICROELECTRONICS RELIABILITY - -