This paper presents a fast methodology for the investigation of trapping and hot-electron effects in GaN-based highelectron mobility transistors (HEMTs). The presented method is based on pulsed ID–VG measurements and electroluminescence characterization and provides a rapid and effective evaluation of the following: 1) the presence of traps in the region under the gate; 2) trapping phenomena occurring in the gate–drain access region; 3) the role of traps in limiting the maximum gate–drain electric field and the equivalent electron temperature. The method is validated by means of a split-wafer experiment carried out on GaN-based HEMTs with different gatematerials with and without passivation.

Investigation of Trapping and Hot-Electron Effects in GaN HEMTs by Means of a Combined Electrooptical Method

MENEGHINI, MATTEO;RONCHI, NICOLO';STOCCO, ANTONIO;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2011

Abstract

This paper presents a fast methodology for the investigation of trapping and hot-electron effects in GaN-based highelectron mobility transistors (HEMTs). The presented method is based on pulsed ID–VG measurements and electroluminescence characterization and provides a rapid and effective evaluation of the following: 1) the presence of traps in the region under the gate; 2) trapping phenomena occurring in the gate–drain access region; 3) the role of traps in limiting the maximum gate–drain electric field and the equivalent electron temperature. The method is validated by means of a split-wafer experiment carried out on GaN-based HEMTs with different gatematerials with and without passivation.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/2477942
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