Deep-Levels characterization in AlGaN/GaN High Electron Mobility Transistors by means of Drain Current Transient Analysis

The identification of the charge-trap-states which undermine the dynamic performances of the GaN-based High Electron Mobility Transistors is fundamental for their technological development, including the improvement of either the structure design and the fabrication techniques. The aim of this work includes (i) the description of the deep-levels characterization methodology based on drain current transient analysis (DCT), and (ii) the demonstration that an effective identification of the defect-states, and their spatial localization within the epitaxial structure, can be gathered by combined bias- and thermal-investigation.