A novel field-effect device for high-density integrated circuits has been developed and manufactured. Numerical device simulations have also been carried out in order to deeply investigate the new structure. Such field-effect device is able to perform simultaneously the functions of two traditional field-effect transistors (e. g. a nMOS and a pMOS), working as one or as the other according to the voltage applied to the gate terminal. Combinational and sequential circuits employing the new technology introduce, with respect to the standard CMOS ones, a drastic reduction of both required devices number and associated parasitic capacitances. This leads to a significant increase of the circuit speed. Furthermore, the IC circuits obtained with these novel devices are fully compatible with standard CMOS technology and fabrication processes.

Double Control Gate Field-Effect Transistor for Area Efficient and Cost Effective Applications

MARINO, FABIO ALESSIO;STOCCO, ANTONIO;BARBATO, MARCO;ZANONI, ENRICO;MENEGHESSO, GAUDENZIO
2014

Abstract

A novel field-effect device for high-density integrated circuits has been developed and manufactured. Numerical device simulations have also been carried out in order to deeply investigate the new structure. Such field-effect device is able to perform simultaneously the functions of two traditional field-effect transistors (e. g. a nMOS and a pMOS), working as one or as the other according to the voltage applied to the gate terminal. Combinational and sequential circuits employing the new technology introduce, with respect to the standard CMOS ones, a drastic reduction of both required devices number and associated parasitic capacitances. This leads to a significant increase of the circuit speed. Furthermore, the IC circuits obtained with these novel devices are fully compatible with standard CMOS technology and fabrication processes.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11577/3065501
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