This letter reports an extensive analysis of the charge capture transients induced by OFF-state bias in double heterostructure AlGaN/GaN MIS-high electron mobility transistor grown on silicon substrate. The exposure to OFF-state bias induces a significant increase in the ON-resistance (R-on) of the devices. Thanks to time-resolved on-the-fly analysis of the trapping kinetics, we demonstrate the following relevant results: 1) R-on-increase is temperature-and field-dependent, hence can significantly limit the dynamic performance of the devices at relatively high-voltage and high temperature (100°C - 140°C) operative conditions; 2) the comparison between OFF-state and back-gating stress indicates that the major contribution to the R-on-increase is due to the trapping of electrons in the buffer, and not at the surface; 3) the observed exponential kinetics suggests the involvement of point-defects, featuring thermally activated capture cross section; and 4) trapping-rate is correlated with buffer vertical leakage-current and is almost independent to gate-drain length.

Kinetics of Buffer-Related RON-Increase in GaN-on-Silicon MIS-HEMTs

BISI, DAVIDE;MENEGHINI, MATTEO;MARINO, FABIO ALESSIO;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2014

Abstract

This letter reports an extensive analysis of the charge capture transients induced by OFF-state bias in double heterostructure AlGaN/GaN MIS-high electron mobility transistor grown on silicon substrate. The exposure to OFF-state bias induces a significant increase in the ON-resistance (R-on) of the devices. Thanks to time-resolved on-the-fly analysis of the trapping kinetics, we demonstrate the following relevant results: 1) R-on-increase is temperature-and field-dependent, hence can significantly limit the dynamic performance of the devices at relatively high-voltage and high temperature (100°C - 140°C) operative conditions; 2) the comparison between OFF-state and back-gating stress indicates that the major contribution to the R-on-increase is due to the trapping of electrons in the buffer, and not at the surface; 3) the observed exponential kinetics suggests the involvement of point-defects, featuring thermally activated capture cross section; and 4) trapping-rate is correlated with buffer vertical leakage-current and is almost independent to gate-drain length.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/3065502
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