Comprehensive RF stress-test campaign has been performed over AlGaN/GaN high-electron mobility transistor employing different GaN buffer designs, including unintentional doping, carbon doping and iron doping. No signature of gate-edge degradation has been found, and good correlation emerges between the buffer composition, subthreshold leakage current, and permanent degradation of the RF performance. The degradation mechanism, more pronounced in devices with parasitic buffer conductivity, involves the generation of additional deep trap states, the worsening of the dynamic current collapse, and the subsequent degradation of RF output power. © 2015 IEEE.

Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors during RF Operation: Correlation with GaN Buffer Design

BISI, DAVIDE;STOCCO, ANTONIO;MENEGHINI, MATTEO;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2015

Abstract

Comprehensive RF stress-test campaign has been performed over AlGaN/GaN high-electron mobility transistor employing different GaN buffer designs, including unintentional doping, carbon doping and iron doping. No signature of gate-edge degradation has been found, and good correlation emerges between the buffer composition, subthreshold leakage current, and permanent degradation of the RF performance. The degradation mechanism, more pronounced in devices with parasitic buffer conductivity, involves the generation of additional deep trap states, the worsening of the dynamic current collapse, and the subsequent degradation of RF output power. © 2015 IEEE.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/3183754
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