Over the last decades, the reliability of GaN-based visible LEDs has vastly improved, mostly due to optimizations in device structure and in the epitaxial growth, to a point where a useful lifetime of the solid-state source in excess of 60 kh can be achieved. For these mature devices, extrinsic events, such as EOS and ESD events, represent a major lifetime-limiting factors during operation. This talk investigates from a physical standpoint the impact of overstress events on GaN-based LEDs, and reports on the device-level mitigation strategies that can be adopted to improve LED robustness against such phenomena.
EOS and ESD-related failures of GaN-based LEDs
Matteo Buffolo
2022
Abstract
Over the last decades, the reliability of GaN-based visible LEDs has vastly improved, mostly due to optimizations in device structure and in the epitaxial growth, to a point where a useful lifetime of the solid-state source in excess of 60 kh can be achieved. For these mature devices, extrinsic events, such as EOS and ESD events, represent a major lifetime-limiting factors during operation. This talk investigates from a physical standpoint the impact of overstress events on GaN-based LEDs, and reports on the device-level mitigation strategies that can be adopted to improve LED robustness against such phenomena.File in questo prodotto:
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