We present a detailed investigation of charge trapping processes in Al2O3/GaN vertical MOS capacitors, detected by means of advanced capacitance measurements. The devices stressed at positive bias present a trapping mechanism that results in an increase of the flatband voltage, while under negative voltages the negative charge stored in bulk and interface states is released with a leftward shift of the C-V characteristic. We also demonstrated that the formation of the hump in depletion regime is the result of trapping of electrons at the oxide-semiconductor interface. The detected behavior is modeled by considering the DIT profile extrapolated by photoassisted CV measurements. The results provide relevant input for the design of stable and reliable MOS transistors based on GaN.

Trapping in Al2O3/GaN MOScaps investigated by fast capacitive techniques

Fregolent, M;Marcuzzi, A;De Santi, C;Meneghesso, G;Zanoni, E;Meneghini, M
2023

Abstract

We present a detailed investigation of charge trapping processes in Al2O3/GaN vertical MOS capacitors, detected by means of advanced capacitance measurements. The devices stressed at positive bias present a trapping mechanism that results in an increase of the flatband voltage, while under negative voltages the negative charge stored in bulk and interface states is released with a leftward shift of the C-V characteristic. We also demonstrated that the formation of the hump in depletion regime is the result of trapping of electrons at the oxide-semiconductor interface. The detected behavior is modeled by considering the DIT profile extrapolated by photoassisted CV measurements. The results provide relevant input for the design of stable and reliable MOS transistors based on GaN.
2023
Proceedings of the 2023 IEEE International Reliability Physics Symposium (IRPS 2023)
2023 IEEE International Reliability Physics Symposium (IRPS 2023)
978-1-6654-5672-2
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/3491539
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