MARCUZZI, ALBERTO

MARCUZZI, ALBERTO  

Università di Padova  

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Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
A Review of SiC Commercial Devices for Automotive: Properties and Challenges 2023 Alberto MarcuzziDavide FaveroCarlo De SantiGaudenzio MeneghessoEnrico ZanoniMatteo Meneghini - - Proceedings of the 7th AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE 2023)
Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al2O3/GaN MOS Capacitors 2023 Fregolent, ManuelMarcuzzi, AlbertoSanti, Carlo DeMeneghesso, GaudenzioZanoni, EnricoBrusaterra, EnricoMeneghini, Matteo + IEEE TRANSACTIONS ON ELECTRON DEVICES - -
GaN Vertical Devices: challenges for high performance and stability 2023 Matteo MeneghiniManuel FregolentCarlo De SantiMatteo BuffoloAlberto MarcuzziDavide FaveroGaudenzio MeneghessoEnrico Zanoni + - - Proceedings of ICNS-14 conference
GaN-on-Si Power HEMTs for Automotive: Current Status and Perspectives 2023 D. FaveroA. MarcuzziC. De SantiG. MeneghessoE. ZanoniM. Meneghini - - Proceedings of the 7th AEIT International Conference of Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE 2023)
Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs 2022 Fregolent, MBoito, MMarcuzzi, ADe Santi, CMeneghesso, GZanoni, EMeneghini, M + MICROELECTRONICS RELIABILITY - -
Origin and Recovery of Negative Vth Shift on 4H-SiC MOS Capacitors: an Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements 2023 Alberto MarcuzziCarlo De SantiGaudenzio MeneghessoEnrico ZanoniMatteo Meneghini + - - Proceedings of ICSCRM 2023 (International Conference on Silicon Carbide and Related Materials)
Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives 2024 Buffolo, M.Favero, D.Marcuzzi, A.Santi, Carlo DeMeneghesso, G.Zanoni, E.Meneghini, M. IEEE TRANSACTIONS ON ELECTRON DEVICES - -
Threshold Voltage Instability in SiC MOSFETs: Analysis and Modeling 2023 M. MeneghiniA. MarcuzziC. De SantiG. MeneghessoE. Zanoni + - - Proceedings of ICSCRM 2023 (International Conference on Silicon Carbide and Related Materials)
Threshold voltage variation of SiC trench MOSFETs during TDDB stress 2023 Alberto MarcuzziCarlo De SantiMatteo Meneghini + - - Proceedings of ICSCRM 2023 (International Conference on Silicon Carbide and Related Materials)
Trapping in Al2O3/GaN MOScaps investigated by fast capacitive techniques 2023 Fregolent, MMarcuzzi, ADe Santi, CMeneghesso, GZanoni, EMeneghini, M + - IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS Proceedings of the 2023 IEEE International Reliability Physics Symposium (IRPS 2023)