DING, LILI

DING, LILI  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
65 nm technology for HEP: Status and perspective 2014 BAGATIN, MARTABISELLO, DARIOMATTIAZZO, SERENADING, LILIGERARDIN, SIMONEGIUBILATO, PIERONEVIANI, ANDREAPACCAGNELLA, ALESSANDROVOGRIG, DANIELE + POS PROCEEDINGS OF SCIENCE - Proceedings of Science
CHIPIX65: Developments on a new generation pixel readout ASIC in CMOS 65 nm for HEP experiments 2015 BAGATIN, MARTABISELLO, DARIOGERARDIN, SIMONEMATTIAZZO, SERENADING, LILIGIUBILATO, PIEROPACCAGNELLA, ALESSANDRO + - - Proceedings - 2015 6th IEEE International Workshop on Advances in Sensors and Interfaces, IWASI 2015
Comparison of radiation degradation induced by x-ray and 3-MeV protons in 65-nm CMOS transistors 2016 DING, LILIGERARDIN, SIMONEBAGATIN, MARTABISELLO, DARIOMATTIAZZO, SERENAPACCAGNELLA, ALESSANDRO CHINESE PHYSICS B - -
Drain Current Collapse in 65 nm pMOS Transistors After Exposure to Grad Dose 2015 DING, LILIGERARDIN, SIMONEBAGATIN, MARTAMATTIAZZO, SERENABISELLO, DARIOPACCAGNELLA, ALESSANDRO IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Enhancement of Transistor-to-Transistor Variability Due to Total Dose Effects in 65-nm MOSFETs 2015 GERARDIN, SIMONEBAGATIN, MARTADING, LILIMATTIAZZO, SERENAPACCAGNELLA, ALESSANDRO + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Impact of bias conditions on electrical stress and ionizing radiation effects in Si-based TFETs 2016 DING, LILIGERARDIN, SIMONEBAGATIN, MARTAPACCAGNELLA, ALESSANDRO + SOLID-STATE ELECTRONICS - -
Investigation of hot carrier stress and constant voltage stress in high-k Si-based TFETs 2015 DING, LILIGERARDIN, SIMONEBAGATIN, MARTAPACCAGNELLA, ALESSANDRO + IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY - -
Investigation of total ionizing dose effect and displacement damage in 65nm CMOS transistors exposed to 3MeV protons 2015 DING, LILIGERARDIN, SIMONEBAGATIN, MARTABISELLO, DARIOMATTIAZZO, SERENAPACCAGNELLA, ALESSANDRO NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT - -
Radiation tolerance study of a commercial 65nm CMOS technology for high energy physics applications 2016 DING, LILIGERARDIN, SIMONEBAGATIN, MARTABISELLO, DARIOMATTIAZZO, SERENAPACCAGNELLA, ALESSANDRO NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT - -
Radiation vulnerability in 65 nm CMOS I/O transistors after exposure to grad dose 2015 DING, LILIGERARDIN, SIMONEBAGATIN, MARTAMATTIAZZO, SERENABISELLO, DARIOPACCAGNELLA, ALESSANDRO - - Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS
Recent progress of RD53 Collaboration towards next generation Pixel Read-Out Chip for HL-LHC 2016 BAGATIN, MARTABISELLO, DARIOMATTIAZZO, SERENADING, LILIGERARDIN, SIMONEGIUBILATO, PIERONEVIANI, ANDREAPACCAGNELLA, ALESSANDROVOGRIG, DANIELEWYSS, JEFFERY + JOURNAL OF INSTRUMENTATION - -